Drain Resistance of MESFET Calculator

✖Maximum Frequency of Oscillations is defined as the practical upper bound for useful circuit operation with MESFET.ⓘ Maximum Frequency of Oscillations [f_m]			+10% -10%
✖Cut-off Frequency is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through.ⓘ Cut-off Frequency [f_co]			+10% -10%
✖Source Resistance is a measure of how much this source opposes the load from drawing current from it.ⓘ Source Resistance [R_s]			+10% -10%
✖Gate Metallization Resistance is defined as the resistance of metallization of a FET gate stripe that has effect of placing a non-linear resistance in series with the gate junction.ⓘ Gate Metallization Resistance [R_g]			+10% -10%
✖Input Resistance is defined as the total internal resistance as experienced by MESFET.ⓘ Input Resistance [R_i]			+10% -10%

✖Drain Resistance is the ratio of change in drain to source voltage to corresponding change in drain current for a constant gate to source voltage.ⓘ Drain Resistance of MESFET [R_d]

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Drain Resistance of MESFET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Resistance = ((4*Maximum Frequency of Oscillations^2)/Cut-off Frequency^2)*(Source Resistance+Gate Metallization Resistance+Input Resistance)
R_d = ((4*f_m^2)/f_co^2)*(R_s+R_g+R_i)
This formula uses 6 Variables

Variables Used

Drain Resistance - (Measured in Ohm) - Drain Resistance is the ratio of change in drain to source voltage to corresponding change in drain current for a constant gate to source voltage.
Maximum Frequency of Oscillations - (Measured in Hertz) - Maximum Frequency of Oscillations is defined as the practical upper bound for useful circuit operation with MESFET.
Cut-off Frequency - (Measured in Hertz) - Cut-off Frequency is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through.
Source Resistance - (Measured in Ohm) - Source Resistance is a measure of how much this source opposes the load from drawing current from it.
Gate Metallization Resistance - (Measured in Ohm) - Gate Metallization Resistance is defined as the resistance of metallization of a FET gate stripe that has effect of placing a non-linear resistance in series with the gate junction.
Input Resistance - (Measured in Ohm) - Input Resistance is defined as the total internal resistance as experienced by MESFET.

STEP 1: Convert Input(s) to Base Unit

Maximum Frequency of Oscillations: 65 Hertz --> 65 Hertz No Conversion Required
Cut-off Frequency: 30.05 Hertz --> 30.05 Hertz No Conversion Required
Source Resistance: 5.75 Ohm --> 5.75 Ohm No Conversion Required
Gate Metallization Resistance: 2.8 Ohm --> 2.8 Ohm No Conversion Required
Input Resistance: 15.5 Ohm --> 15.5 Ohm No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

R_d = ((4*f_m^2)/f_co^2)*(R_s+R_g+R_i) --> ((4*65^2)/30.05^2)*(5.75+2.8+15.5)

Evaluating ... ...

R_d = 450.103958737656

STEP 3: Convert Result to Output's Unit

450.103958737656 Ohm --> No Conversion Required

FINAL ANSWER

450.103958737656 ≈ 450.104 Ohm <-- Drain Resistance

(Calculation completed in 00.004 seconds)

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< MESFET Characteristics Calculators

Gate Source Capacitance

LaTeX Go Gate Source Capacitance = Transconductance/(2*pi*Cut-off Frequency)

Transconductance in MESFET

LaTeX Go Transconductance = 2*Gate Source Capacitance*pi*Cut-off Frequency

Gate Length of MESFET

LaTeX Go Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency)

Cut-off Frequency

LaTeX Go Cut-off Frequency = Saturated Drift Velocity/(4*pi*Gate Length)

Drain Resistance of MESFET Formula

LaTeX Go

Drain Resistance = ((4*Maximum Frequency of Oscillations^2)/Cut-off Frequency^2)*(Source Resistance+Gate Metallization Resistance+Input Resistance)
R_d = ((4*f_m^2)/f_co^2)*(R_s+R_g+R_i)

What is MESFET?

A MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a p–n junction for a gate.

How to Calculate Drain Resistance of MESFET?

Drain Resistance of MESFET calculator uses Drain Resistance = ((4*Maximum Frequency of Oscillations^2)/Cut-off Frequency^2)*(Source Resistance+Gate Metallization Resistance+Input Resistance) to calculate the Drain Resistance, The Drain Resistance of MESFET formula is defined as is the ratio of change in drain to source voltage to corresponding change in drain current for a constant gate to source voltage. Drain Resistance is denoted by R_d symbol.

How to calculate Drain Resistance of MESFET using this online calculator? To use this online calculator for Drain Resistance of MESFET, enter Maximum Frequency of Oscillations (f_m), Cut-off Frequency (f_co), Source Resistance (R_s), Gate Metallization Resistance (R_g) & Input Resistance (R_i) and hit the calculate button. Here is how the Drain Resistance of MESFET calculation can be explained with given input values -> 450.104 = ((4*65^2)/30.05^2)*(5.75+2.8+15.5).

FAQ

What is Drain Resistance of MESFET?

The Drain Resistance of MESFET formula is defined as is the ratio of change in drain to source voltage to corresponding change in drain current for a constant gate to source voltage and is represented as R_d = ((4*f_m^2)/f_co^2)*(R_s+R_g+R_i) or Drain Resistance = ((4*Maximum Frequency of Oscillations^2)/Cut-off Frequency^2)*(Source Resistance+Gate Metallization Resistance+Input Resistance). Maximum Frequency of Oscillations is defined as the practical upper bound for useful circuit operation with MESFET, Cut-off Frequency is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through, Source Resistance is a measure of how much this source opposes the load from drawing current from it, Gate Metallization Resistance is defined as the resistance of metallization of a FET gate stripe that has effect of placing a non-linear resistance in series with the gate junction & Input Resistance is defined as the total internal resistance as experienced by MESFET.

How to calculate Drain Resistance of MESFET?

The Drain Resistance of MESFET formula is defined as is the ratio of change in drain to source voltage to corresponding change in drain current for a constant gate to source voltage is calculated using Drain Resistance = ((4*Maximum Frequency of Oscillations^2)/Cut-off Frequency^2)*(Source Resistance+Gate Metallization Resistance+Input Resistance). To calculate Drain Resistance of MESFET, you need Maximum Frequency of Oscillations (f_m), Cut-off Frequency (f_co), Source Resistance (R_s), Gate Metallization Resistance (R_g) & Input Resistance (R_i). With our tool, you need to enter the respective value for Maximum Frequency of Oscillations, Cut-off Frequency, Source Resistance, Gate Metallization Resistance & Input Resistance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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