Drain Current without Channel-Length Modulation of MOSFET Calculator

✖Process transconductance in PMOS refers to the gain of a PMOS transistor with respect to its gate-source voltage.ⓘ Process Transconductance in PMOS [k'_p]			+10% -10%
✖Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.ⓘ Aspect Ratio [WL]			+10% -10%
✖Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.ⓘ Gate-Source Voltage [V_gs]			+10% -10%
✖Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.ⓘ Threshold Voltage [V_th]			+10% -10%

✖Drain current is the current that flows between the drain and the source terminals of a field-effect transistor (FET), which is a type of transistor commonly used in electronic circuits.ⓘ Drain Current without Channel-Length Modulation of MOSFET [i_d]

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Drain Current without Channel-Length Modulation of MOSFET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current = 1/2*Process Transconductance in PMOS*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)^2
i_d = 1/2*k'_p*WL*(V_gs-V_th)^2
This formula uses 5 Variables

Variables Used

Drain Current - (Measured in Ampere) - Drain current is the current that flows between the drain and the source terminals of a field-effect transistor (FET), which is a type of transistor commonly used in electronic circuits.
Process Transconductance in PMOS - (Measured in Siemens) - Process transconductance in PMOS refers to the gain of a PMOS transistor with respect to its gate-source voltage.
Aspect Ratio - Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.
Gate-Source Voltage - (Measured in Volt) - Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

STEP 1: Convert Input(s) to Base Unit

Process Transconductance in PMOS: 0.58 Millisiemens --> 0.00058 Siemens (Check conversion here)
Aspect Ratio: 0.1 --> No Conversion Required
Gate-Source Voltage: 4 Volt --> 4 Volt No Conversion Required
Threshold Voltage: 2.3 Volt --> 2.3 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

i_d = 1/2*k'_p*WL*(V_gs-V_th)^2 --> 1/2*0.00058*0.1*(4-2.3)^2

Evaluating ... ...

i_d = 8.381E-05

STEP 3: Convert Result to Output's Unit

8.381E-05 Ampere -->0.08381 Milliampere (Check conversion here)

FINAL ANSWER

0.08381 Milliampere <-- Drain Current

(Calculation completed in 00.004 seconds)

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Birsa Institute of Technology (BIT), Sindri

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< Current Calculators

Second Drain Current of MOSFET on Large-Signal Operation

LaTeX Go Drain Current 2 = DC Bias Current/2-DC Bias Current/Overdrive Voltage*Differential Input Signal/2*sqrt(1-(Differential Input Signal)^2/(4*Overdrive Voltage^2))

First Drain Current of MOSFET on Large-Signal Operation

LaTeX Go Drain Current 1 = DC Bias Current/2+DC Bias Current/Overdrive Voltage*Differential Input Signal/2*sqrt(1-Differential Input Signal^2/(4*Overdrive Voltage^2))

First Drain Current of MOSFET on Large-Signal Operation given Overdrive Voltage

LaTeX Go Drain Current 1 = DC Bias Current/2+DC Bias Current/Overdrive Voltage*Differential Input Signal/2

Drain Current of MOSFET on Large-Signal Operation given Overdrive Voltage

LaTeX Go Drain Current = (DC Bias Current/Overdrive Voltage)*(Differential Input Signal/2)

Drain Current without Channel-Length Modulation of MOSFET Formula

LaTeX Go

Drain Current = 1/2*Process Transconductance in PMOS*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)^2
i_d = 1/2*k'_p*WL*(V_gs-V_th)^2

What is drain current in MOSFET?

The drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs. Vgs characteristic is defined as the subthreshold slope, S, and is one of the most critical performance metrics for MOSFETs in logic applications.

How to Calculate Drain Current without Channel-Length Modulation of MOSFET?

Drain Current without Channel-Length Modulation of MOSFET calculator uses Drain Current = 1/2*Process Transconductance in PMOS*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)^2 to calculate the Drain Current, The Drain current without channel-length modulation of MOSFET is when the MOSFET is used to design an amplifier, it is operated in the saturation region. In effect, then, the MOSFET operates as a voltage-controlled current source. Drain Current is denoted by i_d symbol.

How to calculate Drain Current without Channel-Length Modulation of MOSFET using this online calculator? To use this online calculator for Drain Current without Channel-Length Modulation of MOSFET, enter Process Transconductance in PMOS (k'_p), Aspect Ratio (WL), Gate-Source Voltage (V_gs) & Threshold Voltage (V_th) and hit the calculate button. Here is how the Drain Current without Channel-Length Modulation of MOSFET calculation can be explained with given input values -> 83.81 = 1/2*0.00058*0.1*(4-2.3)^2.

FAQ

What is Drain Current without Channel-Length Modulation of MOSFET?

The Drain current without channel-length modulation of MOSFET is when the MOSFET is used to design an amplifier, it is operated in the saturation region. In effect, then, the MOSFET operates as a voltage-controlled current source and is represented as i_d = 1/2*k'_p*WL*(V_gs-V_th)^2 or Drain Current = 1/2*Process Transconductance in PMOS*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)^2. Process transconductance in PMOS refers to the gain of a PMOS transistor with respect to its gate-source voltage, Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor, Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior & Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

How to calculate Drain Current without Channel-Length Modulation of MOSFET?

The Drain current without channel-length modulation of MOSFET is when the MOSFET is used to design an amplifier, it is operated in the saturation region. In effect, then, the MOSFET operates as a voltage-controlled current source is calculated using Drain Current = 1/2*Process Transconductance in PMOS*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)^2. To calculate Drain Current without Channel-Length Modulation of MOSFET, you need Process Transconductance in PMOS (k'_p), Aspect Ratio (WL), Gate-Source Voltage (V_gs) & Threshold Voltage (V_th). With our tool, you need to enter the respective value for Process Transconductance in PMOS, Aspect Ratio, Gate-Source Voltage & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Drain Current?

In this formula, Drain Current uses Process Transconductance in PMOS, Aspect Ratio, Gate-Source Voltage & Threshold Voltage. We can use 3 other way(s) to calculate the same, which is/are as follows -

Drain Current = (DC Bias Current/Overdrive Voltage)*(Differential Input Signal/2)
Drain Current = (Supply Voltage-Drain Source Voltage)/Load Resistance
Drain Current = Transconductance Parameter*((Critical Voltage-Total Voltage)^2)

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