Drain Current when NMOS Operates as Voltage-Controlled Current Source Calculator

✖The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.ⓘ Process Transconductance Parameter in NMOS [k'_n]			+10% -10%
✖The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.ⓘ Width of Channel [W_c]			+10% -10%
✖Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.ⓘ Length of the Channel [L]			+10% -10%
✖The Gate Source Voltage is the voltage that falls across the gate-source terminal of the transistor.ⓘ Gate Source Voltage [V_gs]			+10% -10%
✖Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.ⓘ Threshold Voltage [V_T]			+10% -10%

✖Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).ⓘ Drain Current when NMOS Operates as Voltage-Controlled Current Source [I_d]

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Drain Current when NMOS Operates as Voltage-Controlled Current Source Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2
I_d = 1/2*k'_n*W_c/L*(V_gs-V_T)^2
This formula uses 6 Variables

Variables Used

Drain Current in NMOS - (Measured in Ampere) - Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).
Process Transconductance Parameter in NMOS - (Measured in Siemens) - The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Width of Channel - (Measured in Meter) - The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.
Length of the Channel - (Measured in Meter) - Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.
Gate Source Voltage - (Measured in Volt) - The Gate Source Voltage is the voltage that falls across the gate-source terminal of the transistor.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

STEP 1: Convert Input(s) to Base Unit

Process Transconductance Parameter in NMOS: 2 Millisiemens --> 0.002 Siemens (Check conversion here)
Width of Channel: 10 Micrometer --> 1E-05 Meter (Check conversion here)
Length of the Channel: 3 Micrometer --> 3E-06 Meter (Check conversion here)
Gate Source Voltage: 10.3 Volt --> 10.3 Volt No Conversion Required
Threshold Voltage: 1.82 Volt --> 1.82 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_d = 1/2*k'_n*W_c/L*(V_gs-V_T)^2 --> 1/2*0.002*1E-05/3E-06*(10.3-1.82)^2

Evaluating ... ...

I_d = 0.239701333333333

STEP 3: Convert Result to Output's Unit

0.239701333333333 Ampere -->239.701333333333 Milliampere (Check conversion here)

FINAL ANSWER

239.701333333333 ≈ 239.7013 Milliampere <-- Drain Current in NMOS

(Calculation completed in 00.004 seconds)

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Birsa Institute of Technology (BIT), Sindri

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< N Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS

LaTeX Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)

Current Entering Drain Terminal of NMOS given Gate Source Voltage

NMOS as Linear Resistance

LaTeX Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))

Electron Drift Velocity of Channel in NMOS Transistor

LaTeX Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel

Drain Current when NMOS Operates as Voltage-Controlled Current Source Formula

LaTeX Go

Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2
I_d = 1/2*k'_n*W_c/L*(V_gs-V_T)^2

What is drain current in MOSFET?

The drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs. Vgs characteristic is defined as the subthreshold slope, S, and is one of the most critical performance metrics for MOSFETs in logic applications.

How to Calculate Drain Current when NMOS Operates as Voltage-Controlled Current Source?

Drain Current when NMOS Operates as Voltage-Controlled Current Source calculator uses Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2 to calculate the Drain Current in NMOS, The Drain Current when NMOS operates as Voltage-Controlled Current Source is when the MOSFET is used to design an amplifier, it is operated in the saturation region. In saturation the drain current is constantly determined by and is independent of constant-current source where the value of the current is determined. The MOSFET operates as a voltage-controlled current source. Drain Current in NMOS is denoted by I_d symbol.

How to calculate Drain Current when NMOS Operates as Voltage-Controlled Current Source using this online calculator? To use this online calculator for Drain Current when NMOS Operates as Voltage-Controlled Current Source, enter Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L), Gate Source Voltage (V_gs) & Threshold Voltage (V_T) and hit the calculate button. Here is how the Drain Current when NMOS Operates as Voltage-Controlled Current Source calculation can be explained with given input values -> 239701.3 = 1/2*0.002*1E-05/3E-06*(10.3-1.82)^2.

FAQ

What is Drain Current when NMOS Operates as Voltage-Controlled Current Source?

The Drain Current when NMOS operates as Voltage-Controlled Current Source is when the MOSFET is used to design an amplifier, it is operated in the saturation region. In saturation the drain current is constantly determined by and is independent of constant-current source where the value of the current is determined. The MOSFET operates as a voltage-controlled current source and is represented as I_d = 1/2*k'_n*W_c/L*(V_gs-V_T)^2 or Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2. The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor, The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel, Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location, The Gate Source Voltage is the voltage that falls across the gate-source terminal of the transistor & Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

How to calculate Drain Current when NMOS Operates as Voltage-Controlled Current Source?

The Drain Current when NMOS operates as Voltage-Controlled Current Source is when the MOSFET is used to design an amplifier, it is operated in the saturation region. In saturation the drain current is constantly determined by and is independent of constant-current source where the value of the current is determined. The MOSFET operates as a voltage-controlled current source is calculated using Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2. To calculate Drain Current when NMOS Operates as Voltage-Controlled Current Source, you need Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L), Gate Source Voltage (V_gs) & Threshold Voltage (V_T). With our tool, you need to enter the respective value for Process Transconductance Parameter in NMOS, Width of Channel, Length of the Channel, Gate Source Voltage & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Drain Current in NMOS?

In this formula, Drain Current in NMOS uses Process Transconductance Parameter in NMOS, Width of Channel, Length of the Channel, Gate Source Voltage & Threshold Voltage. We can use 3 other way(s) to calculate the same, which is/are as follows -

Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)
Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)
Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

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