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Drain Current of MOSFET at Saturation Region Calculator

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✖Transconductance Parameter is defined as the ratio of the change in the output current to the change in the input voltage of a device.ⓘ Transconductance Parameter [β]			+10% -10%
✖Gate Source Voltage refers to the potential difference between the gate terminal and the source terminal of the device. This voltage plays a crucial role in controlling the conductivity of the MOSFET.ⓘ Gate Source Voltage [V_gs]			+10% -10%
✖Threshold Voltage with Zero Body Bias refers to the threshold voltage when there is no external bias applied to the semiconductor substrate (body terminal).ⓘ Threshold Voltage with Zero Body Bias [V_th]			+10% -10%
✖Channel Length Modulation Factor where the effective channel length increases with an increase in the drain-to-source voltage.ⓘ Channel Length Modulation Factor [λ_i]			+10% -10%
✖Drain Source Voltage is the voltage accross drain and source terminal.ⓘ Drain Source Voltage [V_ds]			+10% -10%

✖Drain Current refers to the current flowing between the drain and source terminals of the transistor when it's in operation.ⓘ Drain Current of MOSFET at Saturation Region [I_d]

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Drain Current of MOSFET at Saturation Region Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)
I_d = β/2*(V_gs-V_th)^2*(1+λ_i*V_ds)
This formula uses 6 Variables

Variables Used

Drain Current - (Measured in Ampere) - Drain Current refers to the current flowing between the drain and source terminals of the transistor when it's in operation.
Transconductance Parameter - (Measured in Siemens) - Transconductance Parameter is defined as the ratio of the change in the output current to the change in the input voltage of a device.
Gate Source Voltage - (Measured in Volt) - Gate Source Voltage refers to the potential difference between the gate terminal and the source terminal of the device. This voltage plays a crucial role in controlling the conductivity of the MOSFET.
Threshold Voltage with Zero Body Bias - (Measured in Volt) - Threshold Voltage with Zero Body Bias refers to the threshold voltage when there is no external bias applied to the semiconductor substrate (body terminal).
Channel Length Modulation Factor - Channel Length Modulation Factor where the effective channel length increases with an increase in the drain-to-source voltage.
Drain Source Voltage - (Measured in Volt) - Drain Source Voltage is the voltage accross drain and source terminal.

STEP 1: Convert Input(s) to Base Unit

Transconductance Parameter: 0.0025 Siemens --> 0.0025 Siemens No Conversion Required
Gate Source Voltage: 2.45 Volt --> 2.45 Volt No Conversion Required
Threshold Voltage with Zero Body Bias: 3.4 Volt --> 3.4 Volt No Conversion Required
Channel Length Modulation Factor: 9 --> No Conversion Required
Drain Source Voltage: 1.24 Volt --> 1.24 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_d = β/2*(V_gs-V_th)^2*(1+λ_i*V_ds) --> 0.0025/2*(2.45-3.4)^2*(1+9*1.24)

Evaluating ... ...

I_d = 0.013718

STEP 3: Convert Result to Output's Unit

0.013718 Ampere --> No Conversion Required

FINAL ANSWER

0.013718 Ampere <-- Drain Current

(Calculation completed in 00.004 seconds)

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< MOS IC Fabrication Calculators

Body Effect in MOSFET

LaTeX Go Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))

Drain Current of MOSFET at Saturation Region

LaTeX Go Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)

Channel Resistance

LaTeX Go Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)

MOSFET Unity-Gain Frequency

LaTeX Go Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)

Drain Current of MOSFET at Saturation Region Formula

LaTeX Go

Why is channel length modulation factor included in the drain current equation?

Including the channel length modulation factor in the equation accounts for the reduction in effective channel length as the drain voltage increases, providing a more accurate representation of the MOSFET behavior in the saturation region.

How to Calculate Drain Current of MOSFET at Saturation Region?

Drain Current of MOSFET at Saturation Region calculator uses Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage) to calculate the Drain Current, The Drain Current of MOSFET at Saturation Region is defined as the phenomena where the effective channel length increases with an increase in the drain-to-source voltage . Drain Current is denoted by I_d symbol.

How to calculate Drain Current of MOSFET at Saturation Region using this online calculator? To use this online calculator for Drain Current of MOSFET at Saturation Region, enter Transconductance Parameter (β), Gate Source Voltage (V_gs), Threshold Voltage with Zero Body Bias (V_th), Channel Length Modulation Factor (λ_i) & Drain Source Voltage (V_ds) and hit the calculate button. Here is how the Drain Current of MOSFET at Saturation Region calculation can be explained with given input values -> 0.013718 = 0.0025/2*(2.45-3.4)^2*(1+9*1.24).

FAQ

What is Drain Current of MOSFET at Saturation Region?

The Drain Current of MOSFET at Saturation Region is defined as the phenomena where the effective channel length increases with an increase in the drain-to-source voltage and is represented as I_d = β/2*(V_gs-V_th)^2*(1+λ_i*V_ds) or Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage). Transconductance Parameter is defined as the ratio of the change in the output current to the change in the input voltage of a device, Gate Source Voltage refers to the potential difference between the gate terminal and the source terminal of the device. This voltage plays a crucial role in controlling the conductivity of the MOSFET, Threshold Voltage with Zero Body Bias refers to the threshold voltage when there is no external bias applied to the semiconductor substrate (body terminal), Channel Length Modulation Factor where the effective channel length increases with an increase in the drain-to-source voltage & Drain Source Voltage is the voltage accross drain and source terminal.

How to calculate Drain Current of MOSFET at Saturation Region?

The Drain Current of MOSFET at Saturation Region is defined as the phenomena where the effective channel length increases with an increase in the drain-to-source voltage is calculated using Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage). To calculate Drain Current of MOSFET at Saturation Region, you need Transconductance Parameter (β), Gate Source Voltage (V_gs), Threshold Voltage with Zero Body Bias (V_th), Channel Length Modulation Factor (λ_i) & Drain Source Voltage (V_ds). With our tool, you need to enter the respective value for Transconductance Parameter, Gate Source Voltage, Threshold Voltage with Zero Body Bias, Channel Length Modulation Factor & Drain Source Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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