Drain Current in Saturation Region of PMOS Transistor given Vov Calculator

✖The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.ⓘ Process Transconductance Parameter in PMOS [k'_p]			+10% -10%
✖Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.ⓘ Aspect Ratio [WL]			+10% -10%
✖Effective voltage is the equivalent DC voltage that would produce the same amount of power dissipation in a resistive load as the AC voltage being measured.ⓘ Effective Voltage [V_ov]			+10% -10%

✖Saturation drain current below threshold voltage is defined as the sub threshold current and varies exponentially with gate to source voltage.ⓘ Drain Current in Saturation Region of PMOS Transistor given Vov [I_ds]

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Drain Current in Saturation Region of PMOS Transistor given Vov Solution

STEP 0: Pre-Calculation Summary

Formula Used

Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2
I_ds = 1/2*k'_p*WL*(V_ov)^2
This formula uses 4 Variables

Variables Used

Saturation Drain Current - (Measured in Ampere) - Saturation drain current below threshold voltage is defined as the sub threshold current and varies exponentially with gate to source voltage.
Process Transconductance Parameter in PMOS - (Measured in Siemens) - The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Aspect Ratio - Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.
Effective Voltage - (Measured in Volt) - Effective voltage is the equivalent DC voltage that would produce the same amount of power dissipation in a resistive load as the AC voltage being measured.

STEP 1: Convert Input(s) to Base Unit

Process Transconductance Parameter in PMOS: 2.1 Millisiemens --> 0.0021 Siemens (Check conversion here)
Aspect Ratio: 6 --> No Conversion Required
Effective Voltage: 2.16 Volt --> 2.16 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_ds = 1/2*k'_p*WL*(V_ov)^2 --> 1/2*0.0021*6*(2.16)^2

Evaluating ... ...

I_ds = 0.02939328

STEP 3: Convert Result to Output's Unit

0.02939328 Ampere -->29.39328 Milliampere (Check conversion here)

FINAL ANSWER

29.39328 Milliampere <-- Saturation Drain Current

(Calculation completed in 00.004 seconds)

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< P Channel Enhancement Calculators

Drain Current in Triode Region of PMOS Transistor

LaTeX Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)

Drain Current in Triode Region of PMOS Transistor given Vsd

LaTeX Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source

Drain Current in Saturation Region of PMOS Transistor

LaTeX Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2

Drain Current in Saturation Region of PMOS Transistor given Vov

LaTeX Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2

Drain Current in Saturation Region of PMOS Transistor given Vov Formula

LaTeX Go

Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2
I_ds = 1/2*k'_p*WL*(V_ov)^2

What is drain current in MOSFET?

The drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs. Vgs characteristic is defined as the subthreshold slope, S, and is one of the most critical performance metrics for MOSFETs in logic applications.

Which way does current flow in a PMOS?

In an NMOS electrons are the charge carriers. So electrons travel from Source to Drain (meaning the current goes from Drain > Source.) In a PMOS holes are the charge carriers1. So holes travel from Source to Drain.

How to Calculate Drain Current in Saturation Region of PMOS Transistor given Vov?

Drain Current in Saturation Region of PMOS Transistor given Vov calculator uses Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2 to calculate the Saturation Drain Current, The Drain current in saturation region of PMOS transistor given Vov, drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation. Saturation Drain Current is denoted by I_ds symbol.

How to calculate Drain Current in Saturation Region of PMOS Transistor given Vov using this online calculator? To use this online calculator for Drain Current in Saturation Region of PMOS Transistor given Vov, enter Process Transconductance Parameter in PMOS (k'_p), Aspect Ratio (WL) & Effective Voltage (V_ov) and hit the calculate button. Here is how the Drain Current in Saturation Region of PMOS Transistor given Vov calculation can be explained with given input values -> 29393.28 = 1/2*0.0021*6*(2.16)^2.

FAQ

What is Drain Current in Saturation Region of PMOS Transistor given Vov?

The Drain current in saturation region of PMOS transistor given Vov, drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation and is represented as I_ds = 1/2*k'_p*WL*(V_ov)^2 or Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2. The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor, Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor & Effective voltage is the equivalent DC voltage that would produce the same amount of power dissipation in a resistive load as the AC voltage being measured.

How to calculate Drain Current in Saturation Region of PMOS Transistor given Vov?

The Drain current in saturation region of PMOS transistor given Vov, drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation is calculated using Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2. To calculate Drain Current in Saturation Region of PMOS Transistor given Vov, you need Process Transconductance Parameter in PMOS (k'_p), Aspect Ratio (WL) & Effective Voltage (V_ov). With our tool, you need to enter the respective value for Process Transconductance Parameter in PMOS, Aspect Ratio & Effective Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Saturation Drain Current?

In this formula, Saturation Drain Current uses Process Transconductance Parameter in PMOS, Aspect Ratio & Effective Voltage. We can use 1 other way(s) to calculate the same, which is/are as follows -

Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2

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