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Donor Dopant Concentration Calculator

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✖Saturation Current refers to the maximum current that can flow through the transistor when it is fully turned on.ⓘ Saturation Current [I_sat]			+10% -10%
✖Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.ⓘ Transistor's Length [L_t]			+10% -10%
✖Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.ⓘ Transistor's Width [W_t]			+10% -10%
✖Electron Mobility describes how quickly electrons can move through the material in response to an electric field.ⓘ Electron Mobility [μ_n]			+10% -10%
✖Depletion Layer Capacitance per Unit Area is the capacitance of depletion layer per unit area.ⓘ Depletion Layer Capacitance [C_dep]			+10% -10%

✖Donor Dopant Concentration is the concentration of donor atoms per unit volume.ⓘ Donor Dopant Concentration [N_d]

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Donor Dopant Concentration Solution

STEP 0: Pre-Calculation Summary

Formula Used

Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance)
N_d = (I_sat*L_t)/([Charge-e]*W_t*μ_n*C_dep)
This formula uses 1 Constants, 6 Variables

Constants Used

[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Variables Used

Donor Dopant Concentration - (Measured in Electrons per Cubic Meter) - Donor Dopant Concentration is the concentration of donor atoms per unit volume.
Saturation Current - (Measured in Ampere) - Saturation Current refers to the maximum current that can flow through the transistor when it is fully turned on.
Transistor's Length - (Measured in Meter) - Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.
Transistor's Width - (Measured in Meter) - Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.
Electron Mobility - (Measured in Square Meter per Volt per Second) - Electron Mobility describes how quickly electrons can move through the material in response to an electric field.
Depletion Layer Capacitance - (Measured in Farad) - Depletion Layer Capacitance per Unit Area is the capacitance of depletion layer per unit area.

STEP 1: Convert Input(s) to Base Unit

Saturation Current: 2.015 Ampere --> 2.015 Ampere No Conversion Required
Transistor's Length: 3.2 Micrometer --> 3.2E-06 Meter (Check conversion here)
Transistor's Width: 5.5 Micrometer --> 5.5E-06 Meter (Check conversion here)
Electron Mobility: 30 Square Meter per Volt per Second --> 30 Square Meter per Volt per Second No Conversion Required
Depletion Layer Capacitance: 1.4 Microfarad --> 1.4E-06 Farad (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

N_d = (I_sat*L_t)/([Charge-e]*W_t*μ_n*C_dep) --> (2.015*3.2E-06)/([Charge-e]*5.5E-06*30*1.4E-06)

Evaluating ... ...

N_d = 1.74221865211214E+23

STEP 3: Convert Result to Output's Unit

1.74221865211214E+23 Electrons per Cubic Meter --> No Conversion Required

FINAL ANSWER

1.74221865211214E+23 ≈ 1.7E+23 Electrons per Cubic Meter <-- Donor Dopant Concentration

(Calculation completed in 00.004 seconds)

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< MOS IC Fabrication Calculators

Body Effect in MOSFET

LaTeX Go Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))

Drain Current of MOSFET at Saturation Region

LaTeX Go Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)

Channel Resistance

LaTeX Go Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)

MOSFET Unity-Gain Frequency

LaTeX Go Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)

Donor Dopant Concentration Formula

LaTeX Go

Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance)
N_d = (I_sat*L_t)/([Charge-e]*W_t*μ_n*C_dep)

What role do donor atoms play in a semiconductor?

Donor atoms introduce extra electrons into the semiconductor, creating a population of free electrons that contribute to the electrical conductivity of the material.

How to Calculate Donor Dopant Concentration?

Donor Dopant Concentration calculator uses Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance) to calculate the Donor Dopant Concentration, The Donor Dopant Concentration formula is defined as the concentration of donor atoms intentionally introduced into a semiconductor material to increase the number of free charge carriers (electrons) available for conduction. Donor Dopant Concentration is denoted by N_d symbol.

How to calculate Donor Dopant Concentration using this online calculator? To use this online calculator for Donor Dopant Concentration, enter Saturation Current (I_sat), Transistor's Length (L_t), Transistor's Width (W_t), Electron Mobility (μ_n) & Depletion Layer Capacitance (C_dep) and hit the calculate button. Here is how the Donor Dopant Concentration calculation can be explained with given input values -> 1.7E+23 = (2.015*3.2E-06)/([Charge-e]*5.5E-06*30*1.4E-06).

FAQ

What is Donor Dopant Concentration?

The Donor Dopant Concentration formula is defined as the concentration of donor atoms intentionally introduced into a semiconductor material to increase the number of free charge carriers (electrons) available for conduction and is represented as N_d = (I_sat*L_t)/([Charge-e]*W_t*μ_n*C_dep) or Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance). Saturation Current refers to the maximum current that can flow through the transistor when it is fully turned on, Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor, Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor, Electron Mobility describes how quickly electrons can move through the material in response to an electric field & Depletion Layer Capacitance per Unit Area is the capacitance of depletion layer per unit area.

How to calculate Donor Dopant Concentration?

The Donor Dopant Concentration formula is defined as the concentration of donor atoms intentionally introduced into a semiconductor material to increase the number of free charge carriers (electrons) available for conduction is calculated using Donor Dopant Concentration = (Saturation Current*Transistor's Length)/([Charge-e]*Transistor's Width*Electron Mobility*Depletion Layer Capacitance). To calculate Donor Dopant Concentration, you need Saturation Current (I_sat), Transistor's Length (L_t), Transistor's Width (W_t), Electron Mobility (μ_n) & Depletion Layer Capacitance (C_dep). With our tool, you need to enter the respective value for Saturation Current, Transistor's Length, Transistor's Width, Electron Mobility & Depletion Layer Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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