Transconductance in MOSFET Solution

STEP 0: Pre-Calculation Summary
Formula Used
Transconductance = (2*Drain Current)/Overdrive Voltage
gm = (2*id)/Vov
This formula uses 3 Variables
Variables Used
Transconductance - (Measured in Siemens) - Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant.
Drain Current - (Measured in Ampere) - Drain current is the current that flows between the drain and the source terminals of a field-effect transistor (FET), which is a type of transistor commonly used in electronic circuits.
Overdrive Voltage - (Measured in Volt) - Overdrive voltage is a term used in electronics and refers to the voltage level applied to a device or component that exceeds its normal operating voltage.
STEP 1: Convert Input(s) to Base Unit
Drain Current: 0.08 Milliampere --> 8E-05 Ampere (Check conversion ​here)
Overdrive Voltage: 0.32 Volt --> 0.32 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
gm = (2*id)/Vov --> (2*8E-05)/0.32
Evaluating ... ...
gm = 0.0005
STEP 3: Convert Result to Output's Unit
0.0005 Siemens -->0.5 Millisiemens (Check conversion ​here)
FINAL ANSWER
0.5 Millisiemens <-- Transconductance
(Calculation completed in 00.004 seconds)

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Birsa Institute of Technology (BIT), Sindri
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Transconductance Calculators

Transconductance given Process Transconductance Parameter
​ LaTeX ​ Go Transconductance = Process Transconductance Parameter*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)
Transconductance given Drain Current
​ LaTeX ​ Go Transconductance = sqrt(2*Process Transconductance Parameter*Aspect Ratio*Drain Current)
Transconductance using Process Transconductance Parameter and Overdrive Voltage
​ LaTeX ​ Go Transconductance = Process Transconductance Parameter*Aspect Ratio*Overdrive Voltage
Drain Current using Transconductance
​ LaTeX ​ Go Drain Current = (Overdrive Voltage)*Transconductance/2

MOSFET Characterstics Calculators

Voltage Gain given Load Resistance of MOSFET
​ LaTeX ​ Go Voltage Gain = Transconductance*(1/(1/Load Resistance+1/Output Resistance))/(1+Transconductance*Source Resistance)
Maximum Voltage Gain at Bias Point
​ LaTeX ​ Go Maximum Voltage Gain = 2*(Supply Voltage-Effective Voltage)/(Effective Voltage)
Voltage Gain given Drain Voltage
​ LaTeX ​ Go Voltage Gain = (Drain Current*Load Resistance*2)/Effective Voltage
Maximum Voltage Gain given all Voltages
​ LaTeX ​ Go Maximum Voltage Gain = (Supply Voltage-0.3)/Thermal Voltage

Transconductance in MOSFET Formula

​LaTeX ​Go
Transconductance = (2*Drain Current)/Overdrive Voltage
gm = (2*id)/Vov

What is Bias Voltage?

The bias voltage is the amount of voltage that an electronic device needs in order to power on and function. Bias voltage must be carefully chosen to operate the device, meaning the power to operate the device must be at a specific level. With too little bias voltage, the power that is sent to the device may be insufficient to turn it on and, thus, the device will not power on. With too much bias voltage, the device may receive too much current and can be destroyed. Check with the manufacturer of the device in use to check how much bias voltage it should receive.

How to Calculate Transconductance in MOSFET?

Transconductance in MOSFET calculator uses Transconductance = (2*Drain Current)/Overdrive Voltage to calculate the Transconductance, Transconductance in MOSFET depends on three parameters (W/L), Veff and Id. Two of which can be chosen independently. Here effective voltage Veff and at a particular current Id is used. The required W/L ratio can then be found and the resulting gm determined. Transconductance is denoted by gm symbol.

How to calculate Transconductance in MOSFET using this online calculator? To use this online calculator for Transconductance in MOSFET, enter Drain Current (id) & Overdrive Voltage (Vov) and hit the calculate button. Here is how the Transconductance in MOSFET calculation can be explained with given input values -> 500 = (2*8E-05)/0.32.

FAQ

What is Transconductance in MOSFET?
Transconductance in MOSFET depends on three parameters (W/L), Veff and Id. Two of which can be chosen independently. Here effective voltage Veff and at a particular current Id is used. The required W/L ratio can then be found and the resulting gm determined and is represented as gm = (2*id)/Vov or Transconductance = (2*Drain Current)/Overdrive Voltage. Drain current is the current that flows between the drain and the source terminals of a field-effect transistor (FET), which is a type of transistor commonly used in electronic circuits & Overdrive voltage is a term used in electronics and refers to the voltage level applied to a device or component that exceeds its normal operating voltage.
How to calculate Transconductance in MOSFET?
Transconductance in MOSFET depends on three parameters (W/L), Veff and Id. Two of which can be chosen independently. Here effective voltage Veff and at a particular current Id is used. The required W/L ratio can then be found and the resulting gm determined is calculated using Transconductance = (2*Drain Current)/Overdrive Voltage. To calculate Transconductance in MOSFET, you need Drain Current (id) & Overdrive Voltage (Vov). With our tool, you need to enter the respective value for Drain Current & Overdrive Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Transconductance?
In this formula, Transconductance uses Drain Current & Overdrive Voltage. We can use 3 other way(s) to calculate the same, which is/are as follows -
  • Transconductance = sqrt(2*Process Transconductance Parameter*Aspect Ratio*Drain Current)
  • Transconductance = Process Transconductance Parameter*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)
  • Transconductance = Process Transconductance Parameter*Aspect Ratio*Overdrive Voltage
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