Current Flowing through Induced Channel in Transistor given Oxide Voltage Calculator

The Current Flowing through Induced Channel in Transistor given Oxide Voltage determines the strength of the electric field across the gate oxide. This electric field influences the distribution of charge carriers in the semiconductor substrate beneath the oxide and is represented as i_o = (μ_e*C_ox*(W_c/L)*(V_ox-V_t))*V_ds or Output Current = (Mobility of Electron*Oxide Capacitance*(Width of Channel/Length of Channel)*(Voltage across Oxide-Threshold Voltage))*Saturation Voltage between Drain and Source. Mobility of electron is defined as the magnitude of average drift velocity per unit electric field, oxide capacitance is the capacitance of the parallel-plate capacitor per unit gate area, Width of Channel is the dimension of the channel of MOSFET, The length of channel, L, which is the distance between the two -p junctions, Voltage across oxide is due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide, Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals & Saturation voltage between drain and source in a transistor is a voltage from collector and emitter required for saturation.