Current Entering Drain Terminal of NMOS given Gate Source Voltage Calculator

✖The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.ⓘ Process Transconductance Parameter in NMOS [k'_n]			+10% -10%
✖The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.ⓘ Width of Channel [W_c]			+10% -10%
✖Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.ⓘ Length of the Channel [L]			+10% -10%
✖The Gate Source Voltage is the voltage that falls across the gate-source terminal of the transistor.ⓘ Gate Source Voltage [V_gs]			+10% -10%
✖Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.ⓘ Threshold Voltage [V_T]			+10% -10%
✖Drain Source Voltage is an electrical term used in electronics and specifically in field-effect transistors . It refers to the voltage difference between the Drain and Source terminals of the FET.ⓘ Drain Source Voltage [V_ds]			+10% -10%

✖Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).ⓘ Current Entering Drain Terminal of NMOS given Gate Source Voltage [I_d]

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Current Entering Drain Terminal of NMOS given Gate Source Voltage Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)
I_d = k'_n*W_c/L*((V_gs-V_T)*V_ds-1/2*V_ds^2)
This formula uses 7 Variables

Variables Used

Drain Current in NMOS - (Measured in Ampere) - Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).
Process Transconductance Parameter in NMOS - (Measured in Siemens) - The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Width of Channel - (Measured in Meter) - The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.
Length of the Channel - (Measured in Meter) - Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.
Gate Source Voltage - (Measured in Volt) - The Gate Source Voltage is the voltage that falls across the gate-source terminal of the transistor.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.
Drain Source Voltage - (Measured in Volt) - Drain Source Voltage is an electrical term used in electronics and specifically in field-effect transistors . It refers to the voltage difference between the Drain and Source terminals of the FET.

STEP 1: Convert Input(s) to Base Unit

Process Transconductance Parameter in NMOS: 2 Millisiemens --> 0.002 Siemens (Check conversion here)
Width of Channel: 10 Micrometer --> 1E-05 Meter (Check conversion here)
Length of the Channel: 3 Micrometer --> 3E-06 Meter (Check conversion here)
Gate Source Voltage: 10.3 Volt --> 10.3 Volt No Conversion Required
Threshold Voltage: 1.82 Volt --> 1.82 Volt No Conversion Required
Drain Source Voltage: 8.43 Volt --> 8.43 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_d = k'_n*W_c/L*((V_gs-V_T)*V_ds-1/2*V_ds^2) --> 0.002*1E-05/3E-06*((10.3-1.82)*8.43-1/2*8.43^2)

Evaluating ... ...

I_d = 0.239693

STEP 3: Convert Result to Output's Unit

0.239693 Ampere -->239.693 Milliampere (Check conversion here)

FINAL ANSWER

239.693 Milliampere <-- Drain Current in NMOS

(Calculation completed in 00.004 seconds)

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Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

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Vishwakarma Government Engineering College (VGEC), Ahmedabad

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< N Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS

LaTeX Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)

Current Entering Drain Terminal of NMOS given Gate Source Voltage

NMOS as Linear Resistance

LaTeX Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))

Electron Drift Velocity of Channel in NMOS Transistor

LaTeX Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel

Current Entering Drain Terminal of NMOS given Gate Source Voltage Formula

LaTeX Go

What is drain current in MOSFET?

The drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs. Vgs characteristic is defined as the subthreshold slope, S, and is one of the most critical performance metrics for MOSFETs in logic applications.

How much current can a MOSFET handle?

High amperage MOSFETs like the 511-STP200N3LL say they can handle 120 Amps of current.The Metal Oxide Semiconductor Field Effect Transistor, or MOSFET for short, has an extremely high input gate resistance with the current flowing through the channel between the source and drain being controlled by the gate voltage.

How to Calculate Current Entering Drain Terminal of NMOS given Gate Source Voltage?

Current Entering Drain Terminal of NMOS given Gate Source Voltage calculator uses Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2) to calculate the Drain Current in NMOS, The Current entering drain terminal of NMOS given Gate Source Voltage is the drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs. Drain Current in NMOS is denoted by I_d symbol.

How to calculate Current Entering Drain Terminal of NMOS given Gate Source Voltage using this online calculator? To use this online calculator for Current Entering Drain Terminal of NMOS given Gate Source Voltage, enter Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L), Gate Source Voltage (V_gs), Threshold Voltage (V_T) & Drain Source Voltage (V_ds) and hit the calculate button. Here is how the Current Entering Drain Terminal of NMOS given Gate Source Voltage calculation can be explained with given input values -> 239693 = 0.002*1E-05/3E-06*((10.3-1.82)*8.43-1/2*8.43^2).

FAQ

What is Current Entering Drain Terminal of NMOS given Gate Source Voltage?

The Current entering drain terminal of NMOS given Gate Source Voltage is the drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs and is represented as I_d = k'_n*W_c/L*((V_gs-V_T)*V_ds-1/2*V_ds^2) or Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2). The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor, The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel, Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location, The Gate Source Voltage is the voltage that falls across the gate-source terminal of the transistor, Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics & Drain Source Voltage is an electrical term used in electronics and specifically in field-effect transistors . It refers to the voltage difference between the Drain and Source terminals of the FET.

How to calculate Current Entering Drain Terminal of NMOS given Gate Source Voltage?

The Current entering drain terminal of NMOS given Gate Source Voltage is the drain current below threshold voltage is defined as the subthreshold current and varies exponentially with Vgs. The reciprocal of the slope of the log(Ids) vs is calculated using Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2). To calculate Current Entering Drain Terminal of NMOS given Gate Source Voltage, you need Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L), Gate Source Voltage (V_gs), Threshold Voltage (V_T) & Drain Source Voltage (V_ds). With our tool, you need to enter the respective value for Process Transconductance Parameter in NMOS, Width of Channel, Length of the Channel, Gate Source Voltage, Threshold Voltage & Drain Source Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Drain Current in NMOS?

In this formula, Drain Current in NMOS uses Process Transconductance Parameter in NMOS, Width of Channel, Length of the Channel, Gate Source Voltage, Threshold Voltage & Drain Source Voltage. We can use 3 other way(s) to calculate the same, which is/are as follows -

Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)
Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2
Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2

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