Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage Calculator

✖The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.ⓘ Process Transconductance Parameter in NMOS [k'_n]			+10% -10%
✖The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.ⓘ Width of Channel [W_c]			+10% -10%
✖Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.ⓘ Length of the Channel [L]			+10% -10%
✖Overdrive voltage in NMOS typically refers to the voltage applied to a device or component that exceeds its normal operating voltage.ⓘ Overdrive Voltage in NMOS [V_ov]			+10% -10%

✖Saturation drain current below threshold voltage is defined as the sub threshold current and varies exponentially with gate to source voltage.ⓘ Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage [I_ds]

⎘ Copy

👎

Formula

LaTeX

Reset

👍

Download MOSFET Formula PDF PDF Image

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage Solution

STEP 0: Pre-Calculation Summary

Formula Used

Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2
I_ds = 1/2*k'_n*W_c/L*(V_ov)^2
This formula uses 5 Variables

Variables Used

Saturation Drain Current - (Measured in Ampere) - Saturation drain current below threshold voltage is defined as the sub threshold current and varies exponentially with gate to source voltage.
Process Transconductance Parameter in NMOS - (Measured in Siemens) - The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Width of Channel - (Measured in Meter) - The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.
Length of the Channel - (Measured in Meter) - Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.
Overdrive Voltage in NMOS - (Measured in Volt) - Overdrive voltage in NMOS typically refers to the voltage applied to a device or component that exceeds its normal operating voltage.

STEP 1: Convert Input(s) to Base Unit

Process Transconductance Parameter in NMOS: 2 Millisiemens --> 0.002 Siemens (Check conversion here)
Width of Channel: 10 Micrometer --> 1E-05 Meter (Check conversion here)
Length of the Channel: 3 Micrometer --> 3E-06 Meter (Check conversion here)
Overdrive Voltage in NMOS: 8.48 Volt --> 8.48 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_ds = 1/2*k'_n*W_c/L*(V_ov)^2 --> 1/2*0.002*1E-05/3E-06*(8.48)^2

Evaluating ... ...

I_ds = 0.239701333333333

STEP 3: Convert Result to Output's Unit

0.239701333333333 Ampere -->239.701333333333 Milliampere (Check conversion here)

FINAL ANSWER

239.701333333333 ≈ 239.7013 Milliampere <-- Saturation Drain Current

(Calculation completed in 00.004 seconds)

You are here -

Home » Engineering » Electronics » MOSFET » Analog Electronics » N Channel Enhancement » Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

Credits

Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

Payal Priya has created this Calculator and 600+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Calculator and 1900+ more calculators!

< N Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS

LaTeX Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)

Current Entering Drain Terminal of NMOS given Gate Source Voltage

NMOS as Linear Resistance

LaTeX Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))

Electron Drift Velocity of Channel in NMOS Transistor

LaTeX Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage Formula

LaTeX Go

Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2
I_ds = 1/2*k'_n*W_c/L*(V_ov)^2

What is saturation region?

The second region is called “saturation”. This is where the base current has increased well beyond the point that the emitter-base junction is forward biased. In fact, the base current has increased beyond the point where it can cause the collector current flow to increase.

What is the condition for an NMOS to be in saturation?

The MOSFET is in saturation when V(GS) > V(TH) and V(DS) > V(GS) - V(TH). ... If I slowly increase the gate voltage starting from 0, the MOSFET remains off. The LED starts conducting a small amount of current when the gate voltage is around 2.5V or so.

How to Calculate Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage?

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage calculator uses Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2 to calculate the Saturation Drain Current, Current entering drain-source at saturation region of NMOS given effective voltage drain current first increases linearly with applied drain-to-source voltage, but then reaches maximum value. A depletion layer located at drain end of gate accommodates additional drain-to-source voltage. This behavior is referred to as drain current saturation. Saturation Drain Current is denoted by I_ds symbol.

How to calculate Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage using this online calculator? To use this online calculator for Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage, enter Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L) & Overdrive Voltage in NMOS (V_ov) and hit the calculate button. Here is how the Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage calculation can be explained with given input values -> 239701.3 = 1/2*0.002*1E-05/3E-06*(8.48)^2.

FAQ

What is Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage?

Current entering drain-source at saturation region of NMOS given effective voltage drain current first increases linearly with applied drain-to-source voltage, but then reaches maximum value. A depletion layer located at drain end of gate accommodates additional drain-to-source voltage. This behavior is referred to as drain current saturation and is represented as I_ds = 1/2*k'_n*W_c/L*(V_ov)^2 or Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2. The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor, The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel, Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location & Overdrive voltage in NMOS typically refers to the voltage applied to a device or component that exceeds its normal operating voltage.

How to calculate Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage?

Current entering drain-source at saturation region of NMOS given effective voltage drain current first increases linearly with applied drain-to-source voltage, but then reaches maximum value. A depletion layer located at drain end of gate accommodates additional drain-to-source voltage. This behavior is referred to as drain current saturation is calculated using Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2. To calculate Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage, you need Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L) & Overdrive Voltage in NMOS (V_ov). With our tool, you need to enter the respective value for Process Transconductance Parameter in NMOS, Width of Channel, Length of the Channel & Overdrive Voltage in NMOS and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search