Current Entering Drain-Source at Saturation Region of NMOS Calculator

✖The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.ⓘ Process Transconductance Parameter in NMOS [k'_n]			+10% -10%
✖The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.ⓘ Width of Channel [W_c]			+10% -10%
✖Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.ⓘ Length of the Channel [L]			+10% -10%
✖The Gate Source Voltage is the voltage that falls across the gate-source terminal of the transistor.ⓘ Gate Source Voltage [V_gs]			+10% -10%
✖Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.ⓘ Threshold Voltage [V_T]			+10% -10%

✖Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).ⓘ Current Entering Drain-Source at Saturation Region of NMOS [I_d]

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Current Entering Drain-Source at Saturation Region of NMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2
I_d = 1/2*k'_n*W_c/L*(V_gs-V_T)^2
This formula uses 6 Variables

Variables Used

Drain Current in NMOS - (Measured in Ampere) - Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).
Process Transconductance Parameter in NMOS - (Measured in Siemens) - The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Width of Channel - (Measured in Meter) - The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel.
Length of the Channel - (Measured in Meter) - Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location.
Gate Source Voltage - (Measured in Volt) - The Gate Source Voltage is the voltage that falls across the gate-source terminal of the transistor.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

STEP 1: Convert Input(s) to Base Unit

Process Transconductance Parameter in NMOS: 2 Millisiemens --> 0.002 Siemens (Check conversion here)
Width of Channel: 10 Micrometer --> 1E-05 Meter (Check conversion here)
Length of the Channel: 3 Micrometer --> 3E-06 Meter (Check conversion here)
Gate Source Voltage: 10.3 Volt --> 10.3 Volt No Conversion Required
Threshold Voltage: 1.82 Volt --> 1.82 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_d = 1/2*k'_n*W_c/L*(V_gs-V_T)^2 --> 1/2*0.002*1E-05/3E-06*(10.3-1.82)^2

Evaluating ... ...

I_d = 0.239701333333333

STEP 3: Convert Result to Output's Unit

0.239701333333333 Ampere -->239.701333333333 Milliampere (Check conversion here)

FINAL ANSWER

239.701333333333 ≈ 239.7013 Milliampere <-- Drain Current in NMOS

(Calculation completed in 00.004 seconds)

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Birsa Institute of Technology (BIT), Sindri

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< N Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS

LaTeX Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)

Current Entering Drain Terminal of NMOS given Gate Source Voltage

NMOS as Linear Resistance

LaTeX Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))

Electron Drift Velocity of Channel in NMOS Transistor

LaTeX Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel

Current Entering Drain-Source at Saturation Region of NMOS Formula

LaTeX Go

Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2
I_d = 1/2*k'_n*W_c/L*(V_gs-V_T)^2

What is saturation region?

The second region is called “saturation”. This is where the base current has increased well beyond the point that the emitter-base junction is forward biased. In fact, the base current has increased beyond the point where it can cause the collector current flow to increase.

What is the condition for an NMOS to be in saturation?

The MOSFET is in saturation when V(GS) > V(TH) and V(DS) > V(GS) - V(TH). ... If I slowly increase the gate voltage starting from 0, the MOSFET remains off. The LED starts conducting a small amount of current when the gate voltage is around 2.5V or so.

How to Calculate Current Entering Drain-Source at Saturation Region of NMOS?

Current Entering Drain-Source at Saturation Region of NMOS calculator uses Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2 to calculate the Drain Current in NMOS, The Current entering drain-source at saturation region of NMOS, the drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation. Drain Current in NMOS is denoted by I_d symbol.

How to calculate Current Entering Drain-Source at Saturation Region of NMOS using this online calculator? To use this online calculator for Current Entering Drain-Source at Saturation Region of NMOS, enter Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L), Gate Source Voltage (V_gs) & Threshold Voltage (V_T) and hit the calculate button. Here is how the Current Entering Drain-Source at Saturation Region of NMOS calculation can be explained with given input values -> 239701.3 = 1/2*0.002*1E-05/3E-06*(10.3-1.82)^2.

FAQ

What is Current Entering Drain-Source at Saturation Region of NMOS?

The Current entering drain-source at saturation region of NMOS, the drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation and is represented as I_d = 1/2*k'_n*W_c/L*(V_gs-V_T)^2 or Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2. The Process Transconductance Parameter in NMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor, The width of channel refers to the amount of bandwidth available for transmitting data within a communication channel, Length of the channel can be defined as the distance between its start and end points, and can vary greatly depending on its purpose and location, The Gate Source Voltage is the voltage that falls across the gate-source terminal of the transistor & Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

How to calculate Current Entering Drain-Source at Saturation Region of NMOS?

The Current entering drain-source at saturation region of NMOS, the drain current first increases linearly with the applied drain-to-source voltage, but then reaches a maximum value. A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation is calculated using Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2. To calculate Current Entering Drain-Source at Saturation Region of NMOS, you need Process Transconductance Parameter in NMOS (k'_n), Width of Channel (W_c), Length of the Channel (L), Gate Source Voltage (V_gs) & Threshold Voltage (V_T). With our tool, you need to enter the respective value for Process Transconductance Parameter in NMOS, Width of Channel, Length of the Channel, Gate Source Voltage & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Drain Current in NMOS?

In this formula, Drain Current in NMOS uses Process Transconductance Parameter in NMOS, Width of Channel, Length of the Channel, Gate Source Voltage & Threshold Voltage. We can use 3 other way(s) to calculate the same, which is/are as follows -

Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)
Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)
Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2

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