Current Density due to Holes Calculator

✖Holes Concentration refers to the total number of holes present in a particular area.ⓘ Holes Concentration [N_p]			+10% -10%
✖Mobility of holes is the ability of an hole to move through a metal or semiconductor, in the presence of applied electric field.ⓘ Mobility of Holes [μ_p]			+10% -10%
✖Electric Field Intensity refers to the force per unit charge experienced by charged particles (such as electrons or holes) within the material.ⓘ Electric Field Intensity [E_I]			+10% -10%

✖Holes Current Density is defined as the amount of electric current traveling due to holes per unit cross-section area. It is called as current density and expressed in amperes per square meter.ⓘ Current Density due to Holes [J_p]

⎘ Copy

👎

Formula

✖

Current Density due to Holes

Formula

J p = [Charge-e] \cdot N p \cdot μ p \cdot E I

Example

1.647678 A/m² = [Charge-e] \cdot 2e16 /m³ \cdot 150 m²/V*s \cdot 3.428 V/m

Calculator

LaTeX

Reset

👍

Download Charge Carrier Characteristics Formulas PDF PDF Image

Current Density due to Holes Solution

STEP 0: Pre-Calculation Summary

Formula Used

Holes Current Density = [Charge-e]*Holes Concentration*Mobility of Holes*Electric Field Intensity
J_p = [Charge-e]*N_p*μ_p*E_I
This formula uses 1 Constants, 4 Variables

Constants Used

[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Variables Used

Holes Current Density - (Measured in Ampere per Square Meter) - Holes Current Density is defined as the amount of electric current traveling due to holes per unit cross-section area. It is called as current density and expressed in amperes per square meter.
Holes Concentration - (Measured in 1 per Cubic Meter) - Holes Concentration refers to the total number of holes present in a particular area.
Mobility of Holes - (Measured in Square Meter per Volt per Second) - Mobility of holes is the ability of an hole to move through a metal or semiconductor, in the presence of applied electric field.
Electric Field Intensity - (Measured in Volt per Meter) - Electric Field Intensity refers to the force per unit charge experienced by charged particles (such as electrons or holes) within the material.

STEP 1: Convert Input(s) to Base Unit

Holes Concentration: 2E+16 1 per Cubic Meter --> 2E+16 1 per Cubic Meter No Conversion Required
Mobility of Holes: 150 Square Meter per Volt per Second --> 150 Square Meter per Volt per Second No Conversion Required
Electric Field Intensity: 3.428 Volt per Meter --> 3.428 Volt per Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

J_p = [Charge-e]*N_p*μ_p*E_I --> [Charge-e]*2E+16*150*3.428

Evaluating ... ...

J_p = 1.647678436008

STEP 3: Convert Result to Output's Unit

1.647678436008 Ampere per Square Meter --> No Conversion Required

FINAL ANSWER

1.647678436008 ≈ 1.647678 Ampere per Square Meter <-- Holes Current Density

(Calculation completed in 00.020 seconds)

You are here -

Home » Engineering » Electronics » EDC » Charge Carrier Characteristics » Current Density due to Holes

Credits

Created by Akshada Kulkarni

National Institute of Information Technology (NIIT), Neemrana

Akshada Kulkarni has created this Calculator and 500+ more calculators!

Verified by Team Softusvista

Softusvista Office (Pune), India

Team Softusvista has verified this Calculator and 1100+ more calculators!

< Charge Carrier Characteristics Calculators

Current Density due to Electrons

Go Electron Current Density = [Charge-e]*Electron Concentration*Mobility of Electron*Electric Field Intensity

Current Density due to Holes

Go Holes Current Density = [Charge-e]*Holes Concentration*Mobility of Holes*Electric Field Intensity

Electrons Diffusion Constant

Go Electron Diffusion Constant = Mobility of Electron*(([BoltZ]*Temperature)/[Charge-e])

Hole Diffusion Length

Go Holes Diffusion Length = sqrt(Holes Diffusion Constant*Hole Carrier Lifetime)

Current Density due to Holes Formula

Holes Current Density = [Charge-e]*Holes Concentration*Mobility of Holes*Electric Field Intensity
J_p = [Charge-e]*N_p*μ_p*E_I

How is current density in holes different from current density in electrons?

In semiconductor current flows not only due to electrons instead it is due to drift of electrons as well as holes.
Movement of holes is always in opposite to that of corresponding electrons. Holes contribute current to their direction of movement whereas electrons contribute current opposite to their direction of movement. Hence both currents will be in same direction. Electrons involved in causing current in semiconductor, move through conduction band whereas holes causing current in semiconductor move through valance band. That is why mobility of electrons and holes are different in semiconductor.

How to Calculate Current Density due to Holes?

Current Density due to Holes calculator uses Holes Current Density = [Charge-e]*Holes Concentration*Mobility of Holes*Electric Field Intensity to calculate the Holes Current Density, Current Density due to Holes is the current passing through a square centimeter area perpendicular to the direction of flow in a semiconductor. Holes Current Density is denoted by J_p symbol.

How to calculate Current Density due to Holes using this online calculator? To use this online calculator for Current Density due to Holes, enter Holes Concentration (N_p), Mobility of Holes (μ_p) & Electric Field Intensity (E_I) and hit the calculate button. Here is how the Current Density due to Holes calculation can be explained with given input values -> 17.78416 = [Charge-e]*2E+16*150*3.428.

FAQ

What is Current Density due to Holes?

Current Density due to Holes is the current passing through a square centimeter area perpendicular to the direction of flow in a semiconductor and is represented as J_p = [Charge-e]*N_p*μ_p*E_I or Holes Current Density = [Charge-e]*Holes Concentration*Mobility of Holes*Electric Field Intensity. Holes Concentration refers to the total number of holes present in a particular area, Mobility of holes is the ability of an hole to move through a metal or semiconductor, in the presence of applied electric field & Electric Field Intensity refers to the force per unit charge experienced by charged particles (such as electrons or holes) within the material.

How to calculate Current Density due to Holes?

Current Density due to Holes is the current passing through a square centimeter area perpendicular to the direction of flow in a semiconductor is calculated using Holes Current Density = [Charge-e]*Holes Concentration*Mobility of Holes*Electric Field Intensity. To calculate Current Density due to Holes, you need Holes Concentration (N_p), Mobility of Holes (μ_p) & Electric Field Intensity (E_I). With our tool, you need to enter the respective value for Holes Concentration, Mobility of Holes & Electric Field Intensity and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search