Critical Electric Field Calculator

✖velocity Saturation is the phenomenon where carriers approach a maximum velocity vsat when high fields are applied.ⓘ Velocity Saturation [V_sat]			+10% -10%
✖Mobility of electron is defined as the magnitude of average drift velocity per unit electric field.ⓘ Mobility of Electron [µ_e]			+10% -10%

✖Critical Electric Field is defined as the electric force per unit charge.ⓘ Critical Electric Field [E_c]

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Critical Electric Field Solution

STEP 0: Pre-Calculation Summary

Formula Used

Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron
E_c = (2*V_sat)/µ_e
This formula uses 3 Variables

Variables Used

Critical Electric Field - (Measured in Volt per Meter) - Critical Electric Field is defined as the electric force per unit charge.
Velocity Saturation - (Measured in Meter per Second) - velocity Saturation is the phenomenon where carriers approach a maximum velocity vsat when high fields are applied.
Mobility of Electron - (Measured in Square Meter per Volt per Second) - Mobility of electron is defined as the magnitude of average drift velocity per unit electric field.

STEP 1: Convert Input(s) to Base Unit

Velocity Saturation: 10.12 Millimeter per Second --> 0.01012 Meter per Second (Check conversion here)
Mobility of Electron: 49.8 Square Centimeter per Volt Second --> 0.00498 Square Meter per Volt per Second (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

E_c = (2*V_sat)/µ_e --> (2*0.01012)/0.00498

Evaluating ... ...

E_c = 4.06425702811245

STEP 3: Convert Result to Output's Unit

4.06425702811245 Volt per Meter -->0.00406425702811245 Volt per Millimeter (Check conversion here)

FINAL ANSWER

0.00406425702811245 ≈ 0.004064 Volt per Millimeter <-- Critical Electric Field

(Calculation completed in 00.004 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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< CMOS Circuit Characteristics Calculators

CMOS Critical Voltage

LaTeX Go Critical Voltage in CMOS = Critical Electric Field*Mean Free Path

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LaTeX Go Mean Free Path = Critical Voltage in CMOS/Critical Electric Field

Width of Source Diffusion

LaTeX Go Transition Width = Area of Source Diffusion/Length of Source

Area of Source Diffusion

LaTeX Go Area of Source Diffusion = Length of Source*Transition Width

Critical Electric Field Formula

LaTeX Go

Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron
E_c = (2*V_sat)/µ_e

What is velocity saturation?

Velocity saturation is the maximum velocity a charge carrier in a semiconductor, generally an electron, attains in the presence of very high electric fields. When this happens, the semiconductor is said to be in a state of velocity saturation.

How to Calculate Critical Electric Field?

Critical Electric Field calculator uses Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron to calculate the Critical Electric Field, The Critical Electric Field CMOS formula is defined as the electric field at which the velocity of carrier saturates. The loss of energy is because of the collisions of carriers called as scattering effect. Critical Electric Field is denoted by E_c symbol.

How to calculate Critical Electric Field using this online calculator? To use this online calculator for Critical Electric Field, enter Velocity Saturation (V_sat) & Mobility of Electron (µ_e) and hit the calculate button. Here is how the Critical Electric Field calculation can be explained with given input values -> 4.1E-6 = (2*0.01012)/0.00498.

FAQ

What is Critical Electric Field?

The Critical Electric Field CMOS formula is defined as the electric field at which the velocity of carrier saturates. The loss of energy is because of the collisions of carriers called as scattering effect and is represented as E_c = (2*V_sat)/µ_e or Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron. velocity Saturation is the phenomenon where carriers approach a maximum velocity vsat when high fields are applied & Mobility of electron is defined as the magnitude of average drift velocity per unit electric field.

How to calculate Critical Electric Field?

The Critical Electric Field CMOS formula is defined as the electric field at which the velocity of carrier saturates. The loss of energy is because of the collisions of carriers called as scattering effect is calculated using Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron. To calculate Critical Electric Field, you need Velocity Saturation (V_sat) & Mobility of Electron (µ_e). With our tool, you need to enter the respective value for Velocity Saturation & Mobility of Electron and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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