HCF of three numbers

Critical Dimension Calculator

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✖Process Dependent Constant refers to a parameter or value that characterizes a specific aspect of the fabrication process and has a significant impact on the performance of semiconductor devices.ⓘ Process Dependent Constant [k₁]			+10% -10%
✖Wavelength in Photolithography refers to the specific range of electromagnetic radiation employed to pattern semiconductor wafers during the semiconductor fabrication process.ⓘ Wavelength in Photolithography [λ_l]			+10% -10%
✖Numerical Aperture of an Optical System is a parameter used in optics to describe the ability of an optical system. In the context of semiconductor manufacturing and photolithography.ⓘ Numerical Aperture [NA]			+10% -10%

✖Critical Dimension in semiconductor manufacturing refers to the smallest feature size or the smallest measurable size in a given process.ⓘ Critical Dimension [CD]

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Critical Dimension Solution

STEP 0: Pre-Calculation Summary

Formula Used

Critical Dimension = Process Dependent Constant*Wavelength in Photolithography/Numerical Aperture
CD = k₁*λ_l/NA
This formula uses 4 Variables

Variables Used

Critical Dimension - (Measured in Meter) - Critical Dimension in semiconductor manufacturing refers to the smallest feature size or the smallest measurable size in a given process.
Process Dependent Constant - Process Dependent Constant refers to a parameter or value that characterizes a specific aspect of the fabrication process and has a significant impact on the performance of semiconductor devices.
Wavelength in Photolithography - (Measured in Meter) - Wavelength in Photolithography refers to the specific range of electromagnetic radiation employed to pattern semiconductor wafers during the semiconductor fabrication process.
Numerical Aperture - Numerical Aperture of an Optical System is a parameter used in optics to describe the ability of an optical system. In the context of semiconductor manufacturing and photolithography.

STEP 1: Convert Input(s) to Base Unit

Process Dependent Constant: 1.56 --> No Conversion Required
Wavelength in Photolithography: 223 Nanometer --> 2.23E-07 Meter (Check conversion here)
Numerical Aperture: 0.717 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

CD = k₁*λ_l/NA --> 1.56*2.23E-07/0.717

Evaluating ... ...

CD = 4.85188284518829E-07

STEP 3: Convert Result to Output's Unit

4.85188284518829E-07 Meter -->485.188284518829 Nanometer (Check conversion here)

FINAL ANSWER

485.188284518829 ≈ 485.1883 Nanometer <-- Critical Dimension

(Calculation completed in 00.004 seconds)

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Dayananda Sagar College of Engineering (DSCE), Bangalore

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Critical Dimension Formula

LaTeX Go

Critical Dimension = Process Dependent Constant*Wavelength in Photolithography/Numerical Aperture
CD = k₁*λ_l/NA

What factors influence CD in semiconductor fabrication?

CD is influenced by various factors, including the lithography process, photomask quality, exposure wavelength, numerical aperture, and the characteristics of the photoresist used.

How to Calculate Critical Dimension?

Critical Dimension calculator uses Critical Dimension = Process Dependent Constant*Wavelength in Photolithography/Numerical Aperture to calculate the Critical Dimension, The Critical Dimension refers to the smallest dimension or feature size that determines the performance and functionality of the circuit. It is crucial for defining the resolution and accuracy of the fabrication process. Critical Dimension is denoted by CD symbol.

How to calculate Critical Dimension using this online calculator? To use this online calculator for Critical Dimension, enter Process Dependent Constant (k₁), Wavelength in Photolithography (λ_l) & Numerical Aperture (NA) and hit the calculate button. Here is how the Critical Dimension calculation can be explained with given input values -> 4.9E+11 = 1.56*2.23E-07/0.717.

FAQ

What is Critical Dimension?

The Critical Dimension refers to the smallest dimension or feature size that determines the performance and functionality of the circuit. It is crucial for defining the resolution and accuracy of the fabrication process and is represented as CD = k₁*λ_l/NA or Critical Dimension = Process Dependent Constant*Wavelength in Photolithography/Numerical Aperture. Process Dependent Constant refers to a parameter or value that characterizes a specific aspect of the fabrication process and has a significant impact on the performance of semiconductor devices, Wavelength in Photolithography refers to the specific range of electromagnetic radiation employed to pattern semiconductor wafers during the semiconductor fabrication process & Numerical Aperture of an Optical System is a parameter used in optics to describe the ability of an optical system. In the context of semiconductor manufacturing and photolithography.

How to calculate Critical Dimension?

The Critical Dimension refers to the smallest dimension or feature size that determines the performance and functionality of the circuit. It is crucial for defining the resolution and accuracy of the fabrication process is calculated using Critical Dimension = Process Dependent Constant*Wavelength in Photolithography/Numerical Aperture. To calculate Critical Dimension, you need Process Dependent Constant (k₁), Wavelength in Photolithography (λ_l) & Numerical Aperture (NA). With our tool, you need to enter the respective value for Process Dependent Constant, Wavelength in Photolithography & Numerical Aperture and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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