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Conductivity of P-Type Calculator

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✖Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.ⓘ Charge [q]			+10% -10%
✖Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field.ⓘ Electron Doping Silicon Mobility [μ_n]			+10% -10%
✖Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.ⓘ Intrinsic Concentration [n_i]			+10% -10%
✖Equilibrium Concentration of P-Type electrons are the minority carriers and holes are the majority carriers.ⓘ Equilibrium Concentration of P-Type [N_a]			+10% -10%
✖Hole Doping Silicon Mobility is the ability of a hole to travel across a metal or semiconductor in the presence of an applied electric field.ⓘ Hole Doping Silicon Mobility [μ_p]			+10% -10%

✖Ohmic Conductivity is the measure of the capability of the material to pass the flow of electric current. Electrical conductivity differs from one material to another.ⓘ Conductivity of P-Type [σ]

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Conductivity of P-Type Solution

STEP 0: Pre-Calculation Summary

Formula Used

Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)
σ = q*(μ_n*(n_i^2/N_a)+μ_p*N_a)
This formula uses 6 Variables

Variables Used

Ohmic Conductivity - (Measured in Siemens per Meter) - Ohmic Conductivity is the measure of the capability of the material to pass the flow of electric current. Electrical conductivity differs from one material to another.
Charge - (Measured in Coulomb) - Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.
Electron Doping Silicon Mobility - (Measured in Square Meter per Volt per Second) - Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field.
Intrinsic Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.
Equilibrium Concentration of P-Type - (Measured in 1 per Cubic Meter) - Equilibrium Concentration of P-Type electrons are the minority carriers and holes are the majority carriers.
Hole Doping Silicon Mobility - (Measured in Square Meter per Volt per Second) - Hole Doping Silicon Mobility is the ability of a hole to travel across a metal or semiconductor in the presence of an applied electric field.

STEP 1: Convert Input(s) to Base Unit

Charge: 5 Millicoulomb --> 0.005 Coulomb (Check conversion here)
Electron Doping Silicon Mobility: 0.38 Square Centimeter per Volt Second --> 3.8E-05 Square Meter per Volt per Second (Check conversion here)
Intrinsic Concentration: 1.32 1 per Cubic Centimeter --> 1320000 1 per Cubic Meter (Check conversion here)
Equilibrium Concentration of P-Type: 7.1 1 per Cubic Centimeter --> 7100000 1 per Cubic Meter (Check conversion here)
Hole Doping Silicon Mobility: 2.4 Square Centimeter per Volt Second --> 0.00024 Square Meter per Volt per Second (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

σ = q*(μ_n*(n_i^2/N_a)+μ_p*N_a) --> 0.005*(3.8E-05*(1320000^2/7100000)+0.00024*7100000)

Evaluating ... ...

σ = 8.5666276056338

STEP 3: Convert Result to Output's Unit

8.5666276056338 Siemens per Meter -->0.085666276056338 Mho per Centimeter (Check conversion here)

FINAL ANSWER

0.085666276056338 ≈ 0.085666 Mho per Centimeter <-- Ohmic Conductivity

(Calculation completed in 00.020 seconds)

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Created by Rahul Gupta

Chandigarh University (CU), Mohali, Punjab

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Conductivity of N-Type

LaTeX Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

Ohmic Conductivity of Impurity

LaTeX Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)

Impurity with Intrinsic Concentration

LaTeX Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)

Breakout Voltage of Collector Emitter

LaTeX Go Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)

Conductivity of P-Type Formula

LaTeX Go

Is p-type semiconductor more conductive?

In p-type semiconductor, number of holes are more whereas in N-type number of electrons are more. As, conductivity of electron is more than that of holes, so, among P-type and N-type semiconductor, N-type has more conductivity.

How to Calculate Conductivity of P-Type?

Conductivity of P-Type calculator uses Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type) to calculate the Ohmic Conductivity, The Conductivity of P-Type formula is due to the presence of holes. In a P-type semiconductor, the fermi level lies between the acceptor energy level and the valance band. Ohmic Conductivity is denoted by σ symbol.

How to calculate Conductivity of P-Type using this online calculator? To use this online calculator for Conductivity of P-Type, enter Charge (q), Electron Doping Silicon Mobility (μ_n), Intrinsic Concentration (n_i), Equilibrium Concentration of P-Type (N_a) & Hole Doping Silicon Mobility (μ_p) and hit the calculate button. Here is how the Conductivity of P-Type calculation can be explained with given input values -> 0.000857 = 0.005*(3.8E-05*(1320000^2/7100000)+0.00024*7100000).

FAQ

What is Conductivity of P-Type?

The Conductivity of P-Type formula is due to the presence of holes. In a P-type semiconductor, the fermi level lies between the acceptor energy level and the valance band and is represented as σ = q*(μ_n*(n_i^2/N_a)+μ_p*N_a) or Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type). Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons, Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field, Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material, Equilibrium Concentration of P-Type electrons are the minority carriers and holes are the majority carriers & Hole Doping Silicon Mobility is the ability of a hole to travel across a metal or semiconductor in the presence of an applied electric field.

How to calculate Conductivity of P-Type?

The Conductivity of P-Type formula is due to the presence of holes. In a P-type semiconductor, the fermi level lies between the acceptor energy level and the valance band is calculated using Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type). To calculate Conductivity of P-Type, you need Charge (q), Electron Doping Silicon Mobility (μ_n), Intrinsic Concentration (n_i), Equilibrium Concentration of P-Type (N_a) & Hole Doping Silicon Mobility (μ_p). With our tool, you need to enter the respective value for Charge, Electron Doping Silicon Mobility, Intrinsic Concentration, Equilibrium Concentration of P-Type & Hole Doping Silicon Mobility and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Ohmic Conductivity?

In this formula, Ohmic Conductivity uses Charge, Electron Doping Silicon Mobility, Intrinsic Concentration, Equilibrium Concentration of P-Type & Hole Doping Silicon Mobility. We can use 2 other way(s) to calculate the same, which is/are as follows -

Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)
Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

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