Conductivity of Extrinsic Semiconductors for N-type Solution

STEP 0: Pre-Calculation Summary
Formula Used
Conductivity of Extrinsic Semiconductors (n-type) = Donor Concentration*[Charge-e]*Mobility of Electron
σn = Nd*[Charge-e]*μn
This formula uses 1 Constants, 3 Variables
Constants Used
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
Variables Used
Conductivity of Extrinsic Semiconductors (n-type) - (Measured in Siemens per Meter) - Conductivity of extrinsic semiconductors (n-type) is the measure of the ease at which an electric charge or heat can pass through an extrinsic semiconductor material of n-type.
Donor Concentration - (Measured in 1 per Cubic Meter) - Donor concentration is the concentration of electrons in the donor state.
Mobility of Electron - (Measured in Square Meter per Volt per Second) - Mobility of electron is defined as the magnitude of average drift velocity per unit electric field.
STEP 1: Convert Input(s) to Base Unit
Donor Concentration: 2E+17 1 per Cubic Meter --> 2E+17 1 per Cubic Meter No Conversion Required
Mobility of Electron: 180 Square Meter per Volt per Second --> 180 Square Meter per Volt per Second No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
σn = Nd*[Charge-e]*μn --> 2E+17*[Charge-e]*180
Evaluating ... ...
σn = 5.767835832
STEP 3: Convert Result to Output's Unit
5.767835832 Siemens per Meter --> No Conversion Required
FINAL ANSWER
5.767835832 5.767836 Siemens per Meter <-- Conductivity of Extrinsic Semiconductors (n-type)
(Calculation completed in 00.004 seconds)

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Semiconductor Characteristics Calculators

Conductivity in Semiconductors
​ LaTeX ​ Go Conductivity = (Electron Density*[Charge-e]*Mobility of Electron)+(Holes Density*[Charge-e]*Mobility of Holes)
Electron Diffusion Length
​ LaTeX ​ Go Electron Diffusion Length = sqrt(Electron Diffusion Constant*Minority Carrier Lifetime)
Fermi Level of Intrinsic Semiconductors
​ LaTeX ​ Go Fermi Level Intrinsic Semiconductor = (Conduction Band Energy+Valance Band Energy)/2
Mobility of Charge Carriers
​ LaTeX ​ Go Charge Carriers Mobility = Drift Speed/Electric Field Intensity

Conductivity of Extrinsic Semiconductors for N-type Formula

​LaTeX ​Go
Conductivity of Extrinsic Semiconductors (n-type) = Donor Concentration*[Charge-e]*Mobility of Electron
σn = Nd*[Charge-e]*μn

What are extrinsic semiconductors?

Extrinsic semiconductors are just intrinsic semiconductors that have been doped with impurity atoms (one dimensional substitutional defects in this case). Doping is the process where semiconductors increase their electrical conductivity by introducing atoms of different elements into their lattice.

What is n-type extrinsic semiconductor?

An n-type semiconductor is created when pure semiconductors, like Si and Ge, are doped with pentavalent elements. when a semiconductor is doped with a pentavalent atom, electrons are the majority charge carriers. On the other hand, the holes are the minority charge carriers. Therefore, such extrinsic semiconductors are called n-type semiconductors. In an n-type semiconductor,
Number of free electrons >> Number of holes

How to Calculate Conductivity of Extrinsic Semiconductors for N-type?

Conductivity of Extrinsic Semiconductors for N-type calculator uses Conductivity of Extrinsic Semiconductors (n-type) = Donor Concentration*[Charge-e]*Mobility of Electron to calculate the Conductivity of Extrinsic Semiconductors (n-type), Conductivity of Extrinsic Semiconductors for N-type is the measure of an electric charge which can pass through an extrinsic semiconductor material of n-type. Conductivity of Extrinsic Semiconductors (n-type) is denoted by σn symbol.

How to calculate Conductivity of Extrinsic Semiconductors for N-type using this online calculator? To use this online calculator for Conductivity of Extrinsic Semiconductors for N-type, enter Donor Concentration (Nd) & Mobility of Electron n) and hit the calculate button. Here is how the Conductivity of Extrinsic Semiconductors for N-type calculation can be explained with given input values -> 5.767836 = 2E+17*[Charge-e]*180.

FAQ

What is Conductivity of Extrinsic Semiconductors for N-type?
Conductivity of Extrinsic Semiconductors for N-type is the measure of an electric charge which can pass through an extrinsic semiconductor material of n-type and is represented as σn = Nd*[Charge-e]*μn or Conductivity of Extrinsic Semiconductors (n-type) = Donor Concentration*[Charge-e]*Mobility of Electron. Donor concentration is the concentration of electrons in the donor state & Mobility of electron is defined as the magnitude of average drift velocity per unit electric field.
How to calculate Conductivity of Extrinsic Semiconductors for N-type?
Conductivity of Extrinsic Semiconductors for N-type is the measure of an electric charge which can pass through an extrinsic semiconductor material of n-type is calculated using Conductivity of Extrinsic Semiconductors (n-type) = Donor Concentration*[Charge-e]*Mobility of Electron. To calculate Conductivity of Extrinsic Semiconductors for N-type, you need Donor Concentration (Nd) & Mobility of Electron n). With our tool, you need to enter the respective value for Donor Concentration & Mobility of Electron and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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