Conductivity of Extrinsic Semiconductor for P-Type Solution

STEP 0: Pre-Calculation Summary
Formula Used
Conductivity of Extrinsic Semiconductors (p-type) = Acceptor Concentration*[Charge-e]*Mobility of Holes
σp = Na*[Charge-e]*μp
This formula uses 1 Constants, 3 Variables
Constants Used
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
Variables Used
Conductivity of Extrinsic Semiconductors (p-type) - (Measured in Siemens per Meter) - Conductivity of extrinsic semiconductors (p-type) is the measure of the ease at which an electric charge or heat can pass through an extrinsic semiconductor material of p-type.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor concentration is the concentration of holes in acceptor state.
Mobility of Holes - (Measured in Square Meter per Volt per Second) - Mobility of holes is the ability of an hole to move through a metal or semiconductor, in the presence of applied electric field.
STEP 1: Convert Input(s) to Base Unit
Acceptor Concentration: 1E+16 1 per Cubic Meter --> 1E+16 1 per Cubic Meter No Conversion Required
Mobility of Holes: 150 Square Meter per Volt per Second --> 150 Square Meter per Volt per Second No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
σp = Na*[Charge-e]*μp --> 1E+16*[Charge-e]*150
Evaluating ... ...
σp = 0.240326493
STEP 3: Convert Result to Output's Unit
0.240326493 Siemens per Meter --> No Conversion Required
FINAL ANSWER
0.240326493 0.240326 Siemens per Meter <-- Conductivity of Extrinsic Semiconductors (p-type)
(Calculation completed in 00.020 seconds)

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Semiconductor Characteristics Calculators

Conductivity in Semiconductors
​ LaTeX ​ Go Conductivity = (Electron Density*[Charge-e]*Mobility of Electron)+(Holes Density*[Charge-e]*Mobility of Holes)
Electron Diffusion Length
​ LaTeX ​ Go Electron Diffusion Length = sqrt(Electron Diffusion Constant*Minority Carrier Lifetime)
Fermi Level of Intrinsic Semiconductors
​ LaTeX ​ Go Fermi Level Intrinsic Semiconductor = (Conduction Band Energy+Valance Band Energy)/2
Mobility of Charge Carriers
​ LaTeX ​ Go Charge Carriers Mobility = Drift Speed/Electric Field Intensity

Conductivity of Extrinsic Semiconductor for P-Type Formula

​LaTeX ​Go
Conductivity of Extrinsic Semiconductors (p-type) = Acceptor Concentration*[Charge-e]*Mobility of Holes
σp = Na*[Charge-e]*μp

Explain conductivity in semiconductors.

Semiconductors are semi-good electrical conductors because although their valence band is completely filled, the energy gap between the valance band and the conduction band is not too large. Hence some electrons can bridge it to become charge carriers. The difference between semiconductors and an insulator is the magnitude of the energy gap. For semiconductors Eg < 2eV and for Insulators Eg > 2eV.It is well known to us that the conductivity of a semiconductor depends on the concentration of free electrons in it

How to Calculate Conductivity of Extrinsic Semiconductor for P-Type?

Conductivity of Extrinsic Semiconductor for P-Type calculator uses Conductivity of Extrinsic Semiconductors (p-type) = Acceptor Concentration*[Charge-e]*Mobility of Holes to calculate the Conductivity of Extrinsic Semiconductors (p-type), The Conductivity of extrinsic semiconductor for p-type formula is defined as the conduction band electron, and valance band hole participates in electrical conduction. Conductivity of Extrinsic Semiconductors (p-type) is denoted by σp symbol.

How to calculate Conductivity of Extrinsic Semiconductor for P-Type using this online calculator? To use this online calculator for Conductivity of Extrinsic Semiconductor for P-Type, enter Acceptor Concentration (Na) & Mobility of Holes p) and hit the calculate button. Here is how the Conductivity of Extrinsic Semiconductor for P-Type calculation can be explained with given input values -> 0.240326 = 1E+16*[Charge-e]*150.

FAQ

What is Conductivity of Extrinsic Semiconductor for P-Type?
The Conductivity of extrinsic semiconductor for p-type formula is defined as the conduction band electron, and valance band hole participates in electrical conduction and is represented as σp = Na*[Charge-e]*μp or Conductivity of Extrinsic Semiconductors (p-type) = Acceptor Concentration*[Charge-e]*Mobility of Holes. Acceptor concentration is the concentration of holes in acceptor state & Mobility of holes is the ability of an hole to move through a metal or semiconductor, in the presence of applied electric field.
How to calculate Conductivity of Extrinsic Semiconductor for P-Type?
The Conductivity of extrinsic semiconductor for p-type formula is defined as the conduction band electron, and valance band hole participates in electrical conduction is calculated using Conductivity of Extrinsic Semiconductors (p-type) = Acceptor Concentration*[Charge-e]*Mobility of Holes. To calculate Conductivity of Extrinsic Semiconductor for P-Type, you need Acceptor Concentration (Na) & Mobility of Holes p). With our tool, you need to enter the respective value for Acceptor Concentration & Mobility of Holes and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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