Conductance of Channel of MOSFETs Calculator

✖The mobility of electrons at surface of channel refers to the ability of electrons to move or travel through the surface of a semiconductor material, such as a silicon channel in a transistor.ⓘ Mobility of Electrons at Surface of Channel [μ_s]			+10% -10%
✖Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.ⓘ Oxide Capacitance [C_ox]			+10% -10%
✖Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).ⓘ Channel Width [W_c]			+10% -10%
✖Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).ⓘ Channel Length [L]			+10% -10%
✖Voltage across oxide due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide.ⓘ Voltage across Oxide [V_ox]			+10% -10%

✖The conductance of channel is typically defined as the ratio of the current passing through the channel to the voltage across it.ⓘ Conductance of Channel of MOSFETs [G]

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Conductance of Channel of MOSFETs Solution

STEP 0: Pre-Calculation Summary

Formula Used

Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*(Channel Width/Channel Length)*Voltage across Oxide
G = μ_s*C_ox*(W_c/L)*V_ox
This formula uses 6 Variables

Variables Used

Conductance of Channel - (Measured in Siemens) - The conductance of channel is typically defined as the ratio of the current passing through the channel to the voltage across it.
Mobility of Electrons at Surface of Channel - (Measured in Square Meter per Volt per Second) - The mobility of electrons at surface of channel refers to the ability of electrons to move or travel through the surface of a semiconductor material, such as a silicon channel in a transistor.
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
Channel Width - (Measured in Meter) - Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).
Channel Length - (Measured in Meter) - Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).
Voltage across Oxide - (Measured in Volt) - Voltage across oxide due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide.

STEP 1: Convert Input(s) to Base Unit

Mobility of Electrons at Surface of Channel: 38 Square Meter per Volt per Second --> 38 Square Meter per Volt per Second No Conversion Required
Oxide Capacitance: 940 Microfarad --> 0.00094 Farad (Check conversion here)
Channel Width: 10 Micrometer --> 1E-05 Meter (Check conversion here)
Channel Length: 100 Micrometer --> 0.0001 Meter (Check conversion here)
Voltage across Oxide: 5.4 Volt --> 5.4 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

G = μ_s*C_ox*(W_c/L)*V_ox --> 38*0.00094*(1E-05/0.0001)*5.4

Evaluating ... ...

G = 0.0192888

STEP 3: Convert Result to Output's Unit

0.0192888 Siemens -->19.2888 Millisiemens (Check conversion here)

FINAL ANSWER

19.2888 Millisiemens <-- Conductance of Channel

(Calculation completed in 00.004 seconds)

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Birsa Institute of Technology (BIT), Sindri

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< Internal Capacitive Effects and High Frequency Model Calculators

Transition Frequency of MOSFET

LaTeX Go Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance))

Total Capacitance between Gate and Channel of MOSFETs

LaTeX Go Gate Channel Capacitance = Oxide Capacitance*Channel Width*Channel Length

Gate to Source Channel Width of MOSFET

LaTeX Go Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)

Overlap Capacitance of MOSFET

LaTeX Go Overlap Capacitance = Channel Width*Oxide Capacitance*Overlap Length

Conductance of Channel of MOSFETs Formula

LaTeX Go

Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*(Channel Width/Channel Length)*Voltage across Oxide
G = μ_s*C_ox*(W_c/L)*V_ox

What is the formula of transconductance in MOSFET?

Transconductance is a key test for validating the MOSFET performance in power electronics designs. It ensures that a MOSFET is functioning properly and helps engineers choose the best one when voltage gain is a key spec for their circuit designs.

How to Calculate Conductance of Channel of MOSFETs?

Conductance of Channel of MOSFETs calculator uses Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*(Channel Width/Channel Length)*Voltage across Oxide to calculate the Conductance of Channel, The conductance of channel of MOSFETs, defined as the ratio of ionic current through the channel to the applied voltage, can be calculated once the current, the number of ions that traverse the channel per unit time when an external electric field is applied to the system. Conductance of Channel is denoted by G symbol.

How to calculate Conductance of Channel of MOSFETs using this online calculator? To use this online calculator for Conductance of Channel of MOSFETs, enter Mobility of Electrons at Surface of Channel (μ_s), Oxide Capacitance (C_ox), Channel Width (W_c), Channel Length (L) & Voltage across Oxide (V_ox) and hit the calculate button. Here is how the Conductance of Channel of MOSFETs calculation can be explained with given input values -> 19288.8 = 38*0.00094*(1E-05/0.0001)*5.4.

FAQ

What is Conductance of Channel of MOSFETs?

The conductance of channel of MOSFETs, defined as the ratio of ionic current through the channel to the applied voltage, can be calculated once the current, the number of ions that traverse the channel per unit time when an external electric field is applied to the system and is represented as G = μ_s*C_ox*(W_c/L)*V_ox or Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*(Channel Width/Channel Length)*Voltage across Oxide. The mobility of electrons at surface of channel refers to the ability of electrons to move or travel through the surface of a semiconductor material, such as a silicon channel in a transistor, Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits, Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz), Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET) & Voltage across oxide due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide.

How to calculate Conductance of Channel of MOSFETs?

The conductance of channel of MOSFETs, defined as the ratio of ionic current through the channel to the applied voltage, can be calculated once the current, the number of ions that traverse the channel per unit time when an external electric field is applied to the system is calculated using Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*(Channel Width/Channel Length)*Voltage across Oxide. To calculate Conductance of Channel of MOSFETs, you need Mobility of Electrons at Surface of Channel (μ_s), Oxide Capacitance (C_ox), Channel Width (W_c), Channel Length (L) & Voltage across Oxide (V_ox). With our tool, you need to enter the respective value for Mobility of Electrons at Surface of Channel, Oxide Capacitance, Channel Width, Channel Length & Voltage across Oxide and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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