Conductance of Channel of MOSFET using Gate to Source Voltage Calculator

✖The mobility of electrons at surface of channel refers to the ability of electrons to move or travel through the surface of a semiconductor material, such as a silicon channel in a transistor.ⓘ Mobility of Electrons at Surface of Channel [μ_s]			+10% -10%
✖Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.ⓘ Oxide Capacitance [C_ox]			+10% -10%
✖Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).ⓘ Channel Width [W_c]			+10% -10%
✖Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).ⓘ Channel Length [L]			+10% -10%
✖Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.ⓘ Gate-Source Voltage [V_gs]			+10% -10%
✖Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.ⓘ Threshold Voltage [V_th]			+10% -10%

✖The conductance of channel is typically defined as the ratio of the current passing through the channel to the voltage across it.ⓘ Conductance of Channel of MOSFET using Gate to Source Voltage [G]

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Conductance of Channel of MOSFET using Gate to Source Voltage Solution

STEP 0: Pre-Calculation Summary

Formula Used

Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage)
G = μ_s*C_ox*W_c/L*(V_gs-V_th)
This formula uses 7 Variables

Variables Used

Conductance of Channel - (Measured in Siemens) - The conductance of channel is typically defined as the ratio of the current passing through the channel to the voltage across it.
Mobility of Electrons at Surface of Channel - (Measured in Square Meter per Volt per Second) - The mobility of electrons at surface of channel refers to the ability of electrons to move or travel through the surface of a semiconductor material, such as a silicon channel in a transistor.
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
Channel Width - (Measured in Meter) - Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).
Channel Length - (Measured in Meter) - Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).
Gate-Source Voltage - (Measured in Volt) - Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

STEP 1: Convert Input(s) to Base Unit

Mobility of Electrons at Surface of Channel: 38 Square Meter per Volt per Second --> 38 Square Meter per Volt per Second No Conversion Required
Oxide Capacitance: 940 Microfarad --> 0.00094 Farad (Check conversion here)
Channel Width: 10 Micrometer --> 1E-05 Meter (Check conversion here)
Channel Length: 100 Micrometer --> 0.0001 Meter (Check conversion here)
Gate-Source Voltage: 4 Volt --> 4 Volt No Conversion Required
Threshold Voltage: 2.3 Volt --> 2.3 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

G = μ_s*C_ox*W_c/L*(V_gs-V_th) --> 38*0.00094*1E-05/0.0001*(4-2.3)

Evaluating ... ...

G = 0.0060724

STEP 3: Convert Result to Output's Unit

0.0060724 Siemens -->6.0724 Millisiemens (Check conversion here)

FINAL ANSWER

6.0724 Millisiemens <-- Conductance of Channel

(Calculation completed in 00.004 seconds)

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Conductance of Channel of MOSFET using Gate to Source Voltage Formula

LaTeX Go

Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage)
G = μ_s*C_ox*W_c/L*(V_gs-V_th)

What are the applications of conductance in MOSFET?

The applications of conductance in MOSFETs are vast and varied. They include high-frequency amplifiers, switches, voltage regulators, oscillators, and digital logic circuits. Conductance also plays a crucial role in MOSFETs' ability to control current flow and manipulate signal polarity, making them an essential component in modern electronic systems.

How to Calculate Conductance of Channel of MOSFET using Gate to Source Voltage?

Conductance of Channel of MOSFET using Gate to Source Voltage calculator uses Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage) to calculate the Conductance of Channel, The conductance of channel of MOSFET using Gate to Source Voltage is defined as the ratio of ionic current through the channel to the applied voltage, can be calculated once the current, the number of ions that traverse the channel per unit time when an external electric field is applied to the system. Conductance of Channel is denoted by G symbol.

How to calculate Conductance of Channel of MOSFET using Gate to Source Voltage using this online calculator? To use this online calculator for Conductance of Channel of MOSFET using Gate to Source Voltage, enter Mobility of Electrons at Surface of Channel (μ_s), Oxide Capacitance (C_ox), Channel Width (W_c), Channel Length (L), Gate-Source Voltage (V_gs) & Threshold Voltage (V_th) and hit the calculate button. Here is how the Conductance of Channel of MOSFET using Gate to Source Voltage calculation can be explained with given input values -> 6072.4 = 38*0.00094*1E-05/0.0001*(4-2.3).

FAQ

What is Conductance of Channel of MOSFET using Gate to Source Voltage?

The conductance of channel of MOSFET using Gate to Source Voltage is defined as the ratio of ionic current through the channel to the applied voltage, can be calculated once the current, the number of ions that traverse the channel per unit time when an external electric field is applied to the system and is represented as G = μ_s*C_ox*W_c/L*(V_gs-V_th) or Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage). The mobility of electrons at surface of channel refers to the ability of electrons to move or travel through the surface of a semiconductor material, such as a silicon channel in a transistor, Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits, Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz), Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET), Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior & Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

How to calculate Conductance of Channel of MOSFET using Gate to Source Voltage?

The conductance of channel of MOSFET using Gate to Source Voltage is defined as the ratio of ionic current through the channel to the applied voltage, can be calculated once the current, the number of ions that traverse the channel per unit time when an external electric field is applied to the system is calculated using Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage). To calculate Conductance of Channel of MOSFET using Gate to Source Voltage, you need Mobility of Electrons at Surface of Channel (μ_s), Oxide Capacitance (C_ox), Channel Width (W_c), Channel Length (L), Gate-Source Voltage (V_gs) & Threshold Voltage (V_th). With our tool, you need to enter the respective value for Mobility of Electrons at Surface of Channel, Oxide Capacitance, Channel Width, Channel Length, Gate-Source Voltage & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Conductance of Channel?

In this formula, Conductance of Channel uses Mobility of Electrons at Surface of Channel, Oxide Capacitance, Channel Width, Channel Length, Gate-Source Voltage & Threshold Voltage. We can use 1 other way(s) to calculate the same, which is/are as follows -

Conductance of Channel = 1/Linear Resistance

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