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Concentration of Holes in Valence Band Calculator

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Energy Band and Charge Carrier Electrons and Holes Semiconductor Carriers SSD Junction

✖Effective Density of State in Valence Band is defined as the band of electron orbitals that electrons can jump out of, moving into the conduction band when excited.ⓘ Effective Density of State in Valence Band [N_v]			+10% -10%
✖Fermi function is defined as a term used to describe the top of the collection of electron energy levels at absolute zero temperature.ⓘ Fermi Function [f_E]			+10% -10%

✖Holes Concentration in Valance Band refers to the quantity or abundance of holes present in the valence band of a semiconductor material.ⓘ Concentration of Holes in Valence Band [p₀]

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Concentration of Holes in Valence Band Solution

STEP 0: Pre-Calculation Summary

Formula Used

Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function)
p₀ = N_v*(1-f_E)
This formula uses 3 Variables

Variables Used

Holes Concentration in Valance Band - (Measured in 1 per Cubic Meter) - Holes Concentration in Valance Band refers to the quantity or abundance of holes present in the valence band of a semiconductor material.
Effective Density of State in Valence Band - (Measured in 1 per Cubic Meter) - Effective Density of State in Valence Band is defined as the band of electron orbitals that electrons can jump out of, moving into the conduction band when excited.
Fermi Function - Fermi function is defined as a term used to describe the top of the collection of electron energy levels at absolute zero temperature.

STEP 1: Convert Input(s) to Base Unit

Effective Density of State in Valence Band: 240000000000 1 per Cubic Meter --> 240000000000 1 per Cubic Meter No Conversion Required
Fermi Function: 0.022 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

p₀ = N_v*(1-f_E) --> 240000000000*(1-0.022)

Evaluating ... ...

p₀ = 234720000000

STEP 3: Convert Result to Output's Unit

234720000000 1 per Cubic Meter --> No Conversion Required

FINAL ANSWER

234720000000 ≈ 2.3E+11 1 per Cubic Meter <-- Holes Concentration in Valance Band

(Calculation completed in 00.006 seconds)

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< Energy Band and Charge Carrier Calculators

Energy of Electron given Coulomb's Constant

LaTeX Go Energy of Electron = (Quantum Number^2*pi^2*[hP]^2)/(2*[Mass-e]*Potential Well Length^2)

Steady State Electron Concentration

LaTeX Go Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration

Valence Band Energy

LaTeX Go Valence Band Energy = Conduction Band Energy-Energy Gap

Energy Gap

LaTeX Go Energy Gap = Conduction Band Energy-Valence Band Energy

Concentration of Holes in Valence Band Formula

LaTeX Go

Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function)
p₀ = N_v*(1-f_E)

Does valence band contain holes?

Holes reside in the valence band, a level below the conduction band. Doping with an electron acceptor, an atom which may accept an electron, creates a deficiency of electrons, the same as an excess of holes. Since holes are positive charge carriers, an electron acceptor dopant is also known as a P-type dopant.

How to Calculate Concentration of Holes in Valence Band?

Concentration of Holes in Valence Band calculator uses Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function) to calculate the Holes Concentration in Valance Band, The Concentration of Holes in Valence Band formula is defined as acceptor creates one hole in the valence band, and the hole concentration, p, in the valence band of a p-type semiconductor is approximately equal to the acceptor concentration, Na. Holes Concentration in Valance Band is denoted by p₀ symbol.

How to calculate Concentration of Holes in Valence Band using this online calculator? To use this online calculator for Concentration of Holes in Valence Band, enter Effective Density of State in Valence Band (N_v) & Fermi Function (f_E) and hit the calculate button. Here is how the Concentration of Holes in Valence Band calculation can be explained with given input values -> 2.3E+11 = 240000000000*(1-0.022).

FAQ

What is Concentration of Holes in Valence Band?

The Concentration of Holes in Valence Band formula is defined as acceptor creates one hole in the valence band, and the hole concentration, p, in the valence band of a p-type semiconductor is approximately equal to the acceptor concentration, Na and is represented as p₀ = N_v*(1-f_E) or Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function). Effective Density of State in Valence Band is defined as the band of electron orbitals that electrons can jump out of, moving into the conduction band when excited & Fermi function is defined as a term used to describe the top of the collection of electron energy levels at absolute zero temperature.

How to calculate Concentration of Holes in Valence Band?

The Concentration of Holes in Valence Band formula is defined as acceptor creates one hole in the valence band, and the hole concentration, p, in the valence band of a p-type semiconductor is approximately equal to the acceptor concentration, Na is calculated using Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function). To calculate Concentration of Holes in Valence Band, you need Effective Density of State in Valence Band (N_v) & Fermi Function (f_E). With our tool, you need to enter the respective value for Effective Density of State in Valence Band & Fermi Function and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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