How minority charge carriers are distributed in BJT?
The physical operation of the BJT can be enhanced by considering the distribution of minority charge carriers in the base and the emitter. The profiles of the concentration of electrons in the base and holes in the emitter of an NPN transistor operating in the active mode. Observe that since the doping concentration in the emitter, ND, is much higher than the doping concentration in the base, NA, the concentration of electrons injected from emitter to base, n p(0), is much higher than the concentration of holes injected from the base to the emitter, pn(0). Both quantities are proportional to evBE /VT.
How to Calculate Concentration of Electrons Injected from Emitter to Base?
Concentration of Electrons Injected from Emitter to Base calculator uses Concentration of e- Injected from Emitter to Base = Thermal Equilibrium Concentration*e^(Base-Emitter Voltage/Thermal Voltage) to calculate the Concentration of e- Injected from Emitter to Base, The concentration of electrons injected from emitter to base is the number of electrons that is transferred from the emitter region of the transistor to the base region of the transistor. Concentration of e- Injected from Emitter to Base is denoted by Np symbol.
How to calculate Concentration of Electrons Injected from Emitter to Base using this online calculator? To use this online calculator for Concentration of Electrons Injected from Emitter to Base, enter Thermal Equilibrium Concentration (npo), Base-Emitter Voltage (VBE) & Thermal Voltage (Vt) and hit the calculate button. Here is how the Concentration of Electrons Injected from Emitter to Base calculation can be explained with given input values -> 3E+18 = 1E+18*e^(5.15/4.7).