Concentration of Electrons Injected from Emitter to Base Solution

STEP 0: Pre-Calculation Summary
Formula Used
Concentration of e- Injected from Emitter to Base = Thermal Equilibrium Concentration*e^(Base-Emitter Voltage/Thermal Voltage)
Np = npo*e^(VBE/Vt)
This formula uses 1 Constants, 4 Variables
Constants Used
e - Napier's constant Value Taken As 2.71828182845904523536028747135266249
Variables Used
Concentration of e- Injected from Emitter to Base - (Measured in 1 per Cubic Meter) - The concentration of e- injected from emitter to base is the number of electrons passed from emitter to the base.
Thermal Equilibrium Concentration - (Measured in 1 per Cubic Meter) - Thermal Equilibrium Concentration is defined as the concentration of carriers in an amplifier.
Base-Emitter Voltage - (Measured in Volt) - Base-Emitter Voltage is the forward voltage between the base and emitter of the transistor.
Thermal Voltage - (Measured in Volt) - Thermal Voltage is the voltage produced within the p-n junction.
STEP 1: Convert Input(s) to Base Unit
Thermal Equilibrium Concentration: 1E+18 1 per Cubic Meter --> 1E+18 1 per Cubic Meter No Conversion Required
Base-Emitter Voltage: 5.15 Volt --> 5.15 Volt No Conversion Required
Thermal Voltage: 4.7 Volt --> 4.7 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Np = npo*e^(VBE/Vt) --> 1E+18*e^(5.15/4.7)
Evaluating ... ...
Np = 2.99140949952878E+18
STEP 3: Convert Result to Output's Unit
2.99140949952878E+18 1 per Cubic Meter --> No Conversion Required
FINAL ANSWER
2.99140949952878E+18 3E+18 1 per Cubic Meter <-- Concentration of e- Injected from Emitter to Base
(Calculation completed in 00.020 seconds)

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Internal Capacitive Effects and High Frequency Model Calculators

Small-Signal Diffusion Capacitance of BJT
​ LaTeX ​ Go Emitter-Base Capacitance = Device Constant*(Collector Current/Threshold Voltage)
Small-Signal Diffusion Capacitance
​ LaTeX ​ Go Emitter-Base Capacitance = Device Constant*Transconductance
Stored Electron Charge in Base of BJT
​ LaTeX ​ Go Stored Electron Charge = Device Constant*Collector Current
Base-Emitter Junction Capacitance
​ LaTeX ​ Go Base–Emitter Junction Capacitance = 2*Emitter-Base Capacitance

Concentration of Electrons Injected from Emitter to Base Formula

​LaTeX ​Go
Concentration of e- Injected from Emitter to Base = Thermal Equilibrium Concentration*e^(Base-Emitter Voltage/Thermal Voltage)
Np = npo*e^(VBE/Vt)

How minority charge carriers are distributed in BJT?

The physical operation of the BJT can be enhanced by considering the distribution of minority charge carriers in the base and the emitter. The profiles of the concentration of electrons in the base and holes in the emitter of an NPN transistor operating in the active mode. Observe that since the doping concentration in the emitter, ND, is much higher than the doping concentration in the base, NA, the concentration of electrons injected from emitter to base, n p(0), is much higher than the concentration of holes injected from the base to the emitter, pn(0). Both quantities are proportional to evBE /VT.

How to Calculate Concentration of Electrons Injected from Emitter to Base?

Concentration of Electrons Injected from Emitter to Base calculator uses Concentration of e- Injected from Emitter to Base = Thermal Equilibrium Concentration*e^(Base-Emitter Voltage/Thermal Voltage) to calculate the Concentration of e- Injected from Emitter to Base, The concentration of electrons injected from emitter to base is the number of electrons that is transferred from the emitter region of the transistor to the base region of the transistor. Concentration of e- Injected from Emitter to Base is denoted by Np symbol.

How to calculate Concentration of Electrons Injected from Emitter to Base using this online calculator? To use this online calculator for Concentration of Electrons Injected from Emitter to Base, enter Thermal Equilibrium Concentration (npo), Base-Emitter Voltage (VBE) & Thermal Voltage (Vt) and hit the calculate button. Here is how the Concentration of Electrons Injected from Emitter to Base calculation can be explained with given input values -> 3E+18 = 1E+18*e^(5.15/4.7).

FAQ

What is Concentration of Electrons Injected from Emitter to Base?
The concentration of electrons injected from emitter to base is the number of electrons that is transferred from the emitter region of the transistor to the base region of the transistor and is represented as Np = npo*e^(VBE/Vt) or Concentration of e- Injected from Emitter to Base = Thermal Equilibrium Concentration*e^(Base-Emitter Voltage/Thermal Voltage). Thermal Equilibrium Concentration is defined as the concentration of carriers in an amplifier, Base-Emitter Voltage is the forward voltage between the base and emitter of the transistor & Thermal Voltage is the voltage produced within the p-n junction.
How to calculate Concentration of Electrons Injected from Emitter to Base?
The concentration of electrons injected from emitter to base is the number of electrons that is transferred from the emitter region of the transistor to the base region of the transistor is calculated using Concentration of e- Injected from Emitter to Base = Thermal Equilibrium Concentration*e^(Base-Emitter Voltage/Thermal Voltage). To calculate Concentration of Electrons Injected from Emitter to Base, you need Thermal Equilibrium Concentration (npo), Base-Emitter Voltage (VBE) & Thermal Voltage (Vt). With our tool, you need to enter the respective value for Thermal Equilibrium Concentration, Base-Emitter Voltage & Thermal Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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