HCF of two numbers

Concentration in Conduction Band Calculator

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Energy Band and Charge Carrier Electrons and Holes Semiconductor Carriers SSD Junction

✖Effective Density of State in Conduction Band is defined as the number of equivalent energy minima in the conduction band.ⓘ Effective Density of State in Conduction Band [N_c]			+10% -10%
✖Fermi function is defined as a term used to describe the top of the collection of electron energy levels at absolute zero temperature.ⓘ Fermi Function [f_E]			+10% -10%

✖Electron Concentration in Conduction Band refers to the quantity or abundance of free electrons available for conduction in the conduction band of a semiconductor material.ⓘ Concentration in Conduction Band [n₀]

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Concentration in Conduction Band Solution

STEP 0: Pre-Calculation Summary

Formula Used

Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function
n₀ = N_c*f_E
This formula uses 3 Variables

Variables Used

Electron Concentration in Conduction Band - (Measured in 1 per Cubic Meter) - Electron Concentration in Conduction Band refers to the quantity or abundance of free electrons available for conduction in the conduction band of a semiconductor material.
Effective Density of State in Conduction Band - (Measured in 1 per Cubic Meter) - Effective Density of State in Conduction Band is defined as the number of equivalent energy minima in the conduction band.
Fermi Function - Fermi function is defined as a term used to describe the top of the collection of electron energy levels at absolute zero temperature.

STEP 1: Convert Input(s) to Base Unit

Effective Density of State in Conduction Band: 640000000 1 per Cubic Meter --> 640000000 1 per Cubic Meter No Conversion Required
Fermi Function: 0.022 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

n₀ = N_c*f_E --> 640000000*0.022

Evaluating ... ...

n₀ = 14080000

STEP 3: Convert Result to Output's Unit

14080000 1 per Cubic Meter --> No Conversion Required

FINAL ANSWER

14080000 ≈ 1.4E+7 1 per Cubic Meter <-- Electron Concentration in Conduction Band

(Calculation completed in 00.020 seconds)

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< Energy Band and Charge Carrier Calculators

Energy of Electron given Coulomb's Constant

LaTeX Go Energy of Electron = (Quantum Number^2*pi^2*[hP]^2)/(2*[Mass-e]*Potential Well Length^2)

Steady State Electron Concentration

LaTeX Go Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration

Valence Band Energy

LaTeX Go Valence Band Energy = Conduction Band Energy-Energy Gap

Energy Gap

LaTeX Go Energy Gap = Conduction Band Energy-Valence Band Energy

Concentration in Conduction Band Formula

LaTeX Go

Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function
n₀ = N_c*f_E

Is the electron concentration equal to the hole concentration in this intrinsic silicon?

In an intrinsic semiconductor, the number of electrons generated in the conduction band is equal to the number of holes generated in the valence band. Hence the electron-carrier concentration is equal to the hole-carrier concentration.

How to Calculate Concentration in Conduction Band?

Concentration in Conduction Band calculator uses Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function to calculate the Electron Concentration in Conduction Band, Concentration in Conduction Band refers to the quantity or abundance of free electrons available for conduction in the conduction band of a semiconductor material. In semiconductors, the conduction band is the energy band above the valence band, and electrons in this band are not tightly bound to atoms and can move freely. Electron Concentration in Conduction Band is denoted by n₀ symbol.

How to calculate Concentration in Conduction Band using this online calculator? To use this online calculator for Concentration in Conduction Band, enter Effective Density of State in Conduction Band (N_c) & Fermi Function (f_E) and hit the calculate button. Here is how the Concentration in Conduction Band calculation can be explained with given input values -> 1.4E+7 = 640000000*0.022.

FAQ

What is Concentration in Conduction Band?

Concentration in Conduction Band refers to the quantity or abundance of free electrons available for conduction in the conduction band of a semiconductor material. In semiconductors, the conduction band is the energy band above the valence band, and electrons in this band are not tightly bound to atoms and can move freely and is represented as n₀ = N_c*f_E or Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function. Effective Density of State in Conduction Band is defined as the number of equivalent energy minima in the conduction band & Fermi function is defined as a term used to describe the top of the collection of electron energy levels at absolute zero temperature.

How to calculate Concentration in Conduction Band?

Concentration in Conduction Band refers to the quantity or abundance of free electrons available for conduction in the conduction band of a semiconductor material. In semiconductors, the conduction band is the energy band above the valence band, and electrons in this band are not tightly bound to atoms and can move freely is calculated using Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function. To calculate Concentration in Conduction Band, you need Effective Density of State in Conduction Band (N_c) & Fermi Function (f_E). With our tool, you need to enter the respective value for Effective Density of State in Conduction Band & Fermi Function and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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