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Channel Resistance Calculator

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✖Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.ⓘ Transistor's Length [L_t]			+10% -10%
✖Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.ⓘ Transistor's Width [W_t]			+10% -10%
✖Electron Mobility describes how quickly electrons can move through the material in response to an electric field.ⓘ Electron Mobility [μ_n]			+10% -10%
✖Carrier Density refers to the number of charge carriers (electrons or holes) present in the semiconductor channel.ⓘ Carrier Density [Q_on]			+10% -10%

✖Channel Resistance refers to the resistance offered by the semiconductor material in the channel through which the current flows between the source and drain terminals.ⓘ Channel Resistance [R_ch]

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Channel Resistance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)
R_ch = L_t/W_t*1/(μ_n*Q_on)
This formula uses 5 Variables

Variables Used

Channel Resistance - (Measured in Ohm) - Channel Resistance refers to the resistance offered by the semiconductor material in the channel through which the current flows between the source and drain terminals.
Transistor's Length - (Measured in Meter) - Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.
Transistor's Width - (Measured in Meter) - Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor.
Electron Mobility - (Measured in Square Meter per Volt per Second) - Electron Mobility describes how quickly electrons can move through the material in response to an electric field.
Carrier Density - (Measured in Electrons per Cubic Meter) - Carrier Density refers to the number of charge carriers (electrons or holes) present in the semiconductor channel.

STEP 1: Convert Input(s) to Base Unit

Transistor's Length: 3.2 Micrometer --> 3.2E-06 Meter (Check conversion here)
Transistor's Width: 5.5 Micrometer --> 5.5E-06 Meter (Check conversion here)
Electron Mobility: 30 Square Meter per Volt per Second --> 30 Square Meter per Volt per Second No Conversion Required
Carrier Density: 0.0056 Electrons per Cubic Meter --> 0.0056 Electrons per Cubic Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

R_ch = L_t/W_t*1/(μ_n*Q_on) --> 3.2E-06/5.5E-06*1/(30*0.0056)

Evaluating ... ...

R_ch = 3.46320346320346

STEP 3: Convert Result to Output's Unit

3.46320346320346 Ohm --> No Conversion Required

FINAL ANSWER

3.46320346320346 ≈ 3.463203 Ohm <-- Channel Resistance

(Calculation completed in 00.020 seconds)

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Created by banuprakash

Dayananda Sagar College of Engineering (DSCE), Bangalore

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Dayananda Sagar College Of Engineering (DSCE), Banglore

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< MOS IC Fabrication Calculators

Body Effect in MOSFET

LaTeX Go Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))

Drain Current of MOSFET at Saturation Region

LaTeX Go Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)

Channel Resistance

LaTeX Go Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)

MOSFET Unity-Gain Frequency

LaTeX Go Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)

Channel Resistance Formula

LaTeX Go

Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)
R_ch = L_t/W_t*1/(μ_n*Q_on)

Why is channel resistance important in MOSFETs?

Channel resistance plays a critical role in determining the performance of MOSFETs, influencing factors such as power dissipation, speed, and overall efficiency of electronic circuits.

How to Calculate Channel Resistance?

Channel Resistance calculator uses Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density) to calculate the Channel Resistance, The Channel Resistance formula is defined as the resistance of the semiconductor material in the channel through which the current flows between the source and drain terminals. Channel Resistance is denoted by R_ch symbol.

How to calculate Channel Resistance using this online calculator? To use this online calculator for Channel Resistance, enter Transistor's Length (L_t), Transistor's Width (W_t), Electron Mobility (μ_n) & Carrier Density (Q_on) and hit the calculate button. Here is how the Channel Resistance calculation can be explained with given input values -> 3.463203 = 3.2E-06/5.5E-06*1/(30*0.0056).

FAQ

What is Channel Resistance?

The Channel Resistance formula is defined as the resistance of the semiconductor material in the channel through which the current flows between the source and drain terminals and is represented as R_ch = L_t/W_t*1/(μ_n*Q_on) or Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density). Transistor's Length refers to the length of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor, Transistor's Width refers to the width of the channel region in a MOSFET. This dimension plays a crucial role in determining the electrical characteristics and performance of the transistor, Electron Mobility describes how quickly electrons can move through the material in response to an electric field & Carrier Density refers to the number of charge carriers (electrons or holes) present in the semiconductor channel.

How to calculate Channel Resistance?

The Channel Resistance formula is defined as the resistance of the semiconductor material in the channel through which the current flows between the source and drain terminals is calculated using Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density). To calculate Channel Resistance, you need Transistor's Length (L_t), Transistor's Width (W_t), Electron Mobility (μ_n) & Carrier Density (Q_on). With our tool, you need to enter the respective value for Transistor's Length, Transistor's Width, Electron Mobility & Carrier Density and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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