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Channel Charge Calculator

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VLSI Material Optimization Analog VLSI Design

✖Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor.ⓘ Gate Capacitance [C_g]			+10% -10%
✖Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage.ⓘ Gate to Channel Voltage [V_gc]			+10% -10%
✖Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.ⓘ Threshold Voltage [V_t]			+10% -10%

✖Channel Charge is defined as force experienced of a matter, when placed in an electromagnetic field.ⓘ Channel Charge [Q_ch]

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Channel Charge Solution

STEP 0: Pre-Calculation Summary

Formula Used

Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)
Q_ch = C_g*(V_gc-V_t)
This formula uses 4 Variables

Variables Used

Channel Charge - (Measured in Coulomb) - Channel Charge is defined as force experienced of a matter, when placed in an electromagnetic field.
Gate Capacitance - (Measured in Farad) - Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor.
Gate to Channel Voltage - (Measured in Volt) - Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage.
Threshold Voltage - (Measured in Volt) - Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.

STEP 1: Convert Input(s) to Base Unit

Gate Capacitance: 59.61 Microfarad --> 5.961E-05 Farad (Check conversion here)
Gate to Channel Voltage: 7.011 Volt --> 7.011 Volt No Conversion Required
Threshold Voltage: 0.3 Volt --> 0.3 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

Q_ch = C_g*(V_gc-V_t) --> 5.961E-05*(7.011-0.3)

Evaluating ... ...

Q_ch = 0.00040004271

STEP 3: Convert Result to Output's Unit

0.00040004271 Coulomb -->0.40004271 Millicoulomb (Check conversion here)

FINAL ANSWER

0.40004271 ≈ 0.400043 Millicoulomb <-- Channel Charge

(Calculation completed in 00.006 seconds)

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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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< VLSI Material Optimization Calculators

Body Effect Coefficient

LaTeX Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

DIBL Coefficient

LaTeX Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Channel Charge

LaTeX Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Critical Voltage

LaTeX Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Channel Charge Formula

LaTeX Go

Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)
Q_ch = C_g*(V_gc-V_t)

How is long channel model derived?

Long channel model is derived relating the current and voltage (I-V) for an nMOS transistor in each of the cutoff or subthreshold, linear and Saturation region. The model assumes that the channel length is long enough that the lateral electric field (the field between source and drain) is relatively low, which is no longer the case in nanometer devices. This model is variously known as the long-channel, ideal, first-order, or Shockley model.

How to Calculate Channel Charge?

Channel Charge calculator uses Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage) to calculate the Channel Charge, The Channel Charge formula is defined as matter that causes it to experience a force when placed in an electromagnetic field. Channel Charge is denoted by Q_ch symbol.

How to calculate Channel Charge using this online calculator? To use this online calculator for Channel Charge, enter Gate Capacitance (C_g), Gate to Channel Voltage (V_gc) & Threshold Voltage (V_t) and hit the calculate button. Here is how the Channel Charge calculation can be explained with given input values -> 399.9831 = 5.961E-05*(7.011-0.3).

FAQ

What is Channel Charge?

The Channel Charge formula is defined as matter that causes it to experience a force when placed in an electromagnetic field and is represented as Q_ch = C_g*(V_gc-V_t) or Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage). Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor, Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage & Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.

How to calculate Channel Charge?

The Channel Charge formula is defined as matter that causes it to experience a force when placed in an electromagnetic field is calculated using Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage). To calculate Channel Charge, you need Gate Capacitance (C_g), Gate to Channel Voltage (V_gc) & Threshold Voltage (V_t). With our tool, you need to enter the respective value for Gate Capacitance, Gate to Channel Voltage & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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