Built in Potential at Depletion Region Calculator

✖Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.ⓘ Doping Concentration of Acceptor [N_A]			+10% -10%
✖Bulk Fermi Potential is a parameter that describes the electrostatic potential in the bulk (interior) of a semiconductor material.ⓘ Bulk Fermi Potential [Φ_f]			+10% -10%

✖Built in Voltage is a characteristic voltage that exists across a semiconductor device.ⓘ Built in Potential at Depletion Region [Φ_B0]

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Built in Potential at Depletion Region Solution

STEP 0: Pre-Calculation Summary

Formula Used

Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential)))
Φ_B0 = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*N_A*modulus(-2*Φ_f)))
This formula uses 2 Constants, 2 Functions, 3 Variables

Constants Used

[Permitivity-silicon] - Permittivity of silicon Value Taken As 11.7
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)
modulus - Modulus of a number is the remainder when that number is divided by another number., modulus

Variables Used

Built in Voltage - (Measured in Volt) - Built in Voltage is a characteristic voltage that exists across a semiconductor device.
Doping Concentration of Acceptor - (Measured in Electrons per Cubic Meter) - Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.
Bulk Fermi Potential - (Measured in Volt) - Bulk Fermi Potential is a parameter that describes the electrostatic potential in the bulk (interior) of a semiconductor material.

STEP 1: Convert Input(s) to Base Unit

Doping Concentration of Acceptor: 1.32 Electrons per Cubic Centimeter --> 1320000 Electrons per Cubic Meter (Check conversion here)
Bulk Fermi Potential: 0.25 Volt --> 0.25 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

Φ_B0 = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*N_A*modulus(-2*Φ_f))) --> -(sqrt(2*[Charge-e]*[Permitivity-silicon]*1320000*modulus(-2*0.25)))

Evaluating ... ...

Φ_B0 = -1.57302306783086E-06

STEP 3: Convert Result to Output's Unit

-1.57302306783086E-06 Volt --> No Conversion Required

FINAL ANSWER

-1.57302306783086E-06 ≈ -1.6E-6 Volt <-- Built in Voltage

(Calculation completed in 00.004 seconds)

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Created by banuprakash

Dayananda Sagar College of Engineering (DSCE), Bangalore

banuprakash has created this Calculator and 50+ more calculators!

Verified by Dipanjona Mallick

Heritage Insitute of technology (HITK), Kolkata

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< MOS Transistor Calculators

Sidewall Voltage Equivalence Factor

LaTeX Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))

Fermi Potential for P Type

LaTeX Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)

Equivalent Large Signal Junction Capacitance

LaTeX Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor

Zero Bias Sidewall Junction Capacitance per Unit Length

LaTeX Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

Built in Potential at Depletion Region Formula

LaTeX Go

What is the significance of the built-in potential in the depletion region in p-n junctions?

The built-in potential is a crucial parameter that influences the behavior of a p-n junction. It determines the electrostatics of the junction and plays a key role in device characteristics, such as the barrier for majority carriers and the overall behavior in thermal equilibrium.

How to Calculate Built in Potential at Depletion Region?

Built in Potential at Depletion Region calculator uses Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential))) to calculate the Built in Voltage, The Built in Potential at Depletion Region formula is defined as the voltage established across this depleted region when the p-n junction is in thermal equilibrium. Built in Voltage is denoted by Φ_B0 symbol.

How to calculate Built in Potential at Depletion Region using this online calculator? To use this online calculator for Built in Potential at Depletion Region, enter Doping Concentration of Acceptor (N_A) & Bulk Fermi Potential (Φ_f) and hit the calculate button. Here is how the Built in Potential at Depletion Region calculation can be explained with given input values -> -1.6E-6 = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*1320000*modulus(-2*0.25))).

FAQ

What is Built in Potential at Depletion Region?

The Built in Potential at Depletion Region formula is defined as the voltage established across this depleted region when the p-n junction is in thermal equilibrium and is represented as Φ_B0 = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*N_A*modulus(-2*Φ_f))) or Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential))). Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material & Bulk Fermi Potential is a parameter that describes the electrostatic potential in the bulk (interior) of a semiconductor material.

How to calculate Built in Potential at Depletion Region?

The Built in Potential at Depletion Region formula is defined as the voltage established across this depleted region when the p-n junction is in thermal equilibrium is calculated using Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential))). To calculate Built in Potential at Depletion Region, you need Doping Concentration of Acceptor (N_A) & Bulk Fermi Potential (Φ_f). With our tool, you need to enter the respective value for Doping Concentration of Acceptor & Bulk Fermi Potential and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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