HCF calculator

Breakout Voltage of Collector Emitter Calculator

Engineering Chemistry Financial Health More >>

↳

Electronics Chemical Engineering Civil Electrical More >>

⤿

Integrated Circuits (IC)Amplifiers Analog Communications Analog Electronics More >>

⤿

Bipolar IC Fabrication MOS IC Fabrication Schmitt Trigger

✖Collector Base Breakout Voltage is the maximum voltage between the collector and base terminals of a bipolar junction transistor without causing a breakdown in the transistor.ⓘ Collector Base Breakout Voltage [V_cb]			+10% -10%
✖Current Gain of BJT is used to describe the amplification properties of the transistor. It indicates how much the collector current is amplified with respect to the base current.ⓘ Current Gain of BJT [i_g]			+10% -10%
✖Root Number is represent a constant or a factor associated with the transistor.ⓘ Root Number [n]			+10% -10%

✖Collector Emitter Breakout Voltage is voltage between the collector and emitter terminals of a bipolar junction transistor without causing a breakdown in the transistor.ⓘ Breakout Voltage of Collector Emitter [V_ce]

⎘ Copy

👎

Formula

LaTeX

Reset

👍

Download Integrated Circuits (IC) Formula PDF PDF Image

Breakout Voltage of Collector Emitter Solution

STEP 0: Pre-Calculation Summary

Formula Used

Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)
V_ce = V_cb/(i_g)^(1/n)
This formula uses 4 Variables

Variables Used

Collector Emitter Breakout Voltage - (Measured in Volt) - Collector Emitter Breakout Voltage is voltage between the collector and emitter terminals of a bipolar junction transistor without causing a breakdown in the transistor.
Collector Base Breakout Voltage - (Measured in Volt) - Collector Base Breakout Voltage is the maximum voltage between the collector and base terminals of a bipolar junction transistor without causing a breakdown in the transistor.
Current Gain of BJT - (Measured in Volt) - Current Gain of BJT is used to describe the amplification properties of the transistor. It indicates how much the collector current is amplified with respect to the base current.
Root Number - Root Number is represent a constant or a factor associated with the transistor.

STEP 1: Convert Input(s) to Base Unit

Collector Base Breakout Voltage: 3.52 Volt --> 3.52 Volt No Conversion Required
Current Gain of BJT: 2.8 Volt --> 2.8 Volt No Conversion Required
Root Number: 2 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V_ce = V_cb/(i_g)^(1/n) --> 3.52/(2.8)^(1/2)

Evaluating ... ...

V_ce = 2.10360235242853

STEP 3: Convert Result to Output's Unit

2.10360235242853 Volt --> No Conversion Required

FINAL ANSWER

2.10360235242853 ≈ 2.103602 Volt <-- Collector Emitter Breakout Voltage

(Calculation completed in 00.020 seconds)

You are here -

Home » Engineering » Electronics » Integrated Circuits (IC) » Bipolar IC Fabrication » Breakout Voltage of Collector Emitter

Credits

Created by Rahul Gupta

Chandigarh University (CU), Mohali, Punjab

Rahul Gupta has created this Calculator and 25+ more calculators!

Verified by Parminder Singh

Chandigarh University (CU), Punjab

Parminder Singh has verified this Calculator and 500+ more calculators!

< Bipolar IC Fabrication Calculators

Conductivity of N-Type

LaTeX Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

Ohmic Conductivity of Impurity

LaTeX Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)

Impurity with Intrinsic Concentration

LaTeX Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)

Breakout Voltage of Collector Emitter

LaTeX Go Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)

Breakout Voltage of Collector Emitter Formula

LaTeX Go

Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)
V_ce = V_cb/(i_g)^(1/n)

Why is Breakout voltage of CE important?

Exceeding the BVCEO rating can lead to a breakdown in the transistor, causing it to conduct excessively and potentially leading to permanent damage. Therefore, when designing circuits using transistors, it's crucial to ensure that the voltage between the collector and emitter terminals stays below the specified BVCEO value.

How to Calculate Breakout Voltage of Collector Emitter?

Breakout Voltage of Collector Emitter calculator uses Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number) to calculate the Collector Emitter Breakout Voltage, Breakout Voltage of Collector Emitter is a critical parameter in bipolar junction transistors (BJTs). It represents the maximum voltage that can be applied between the collector and emitter terminals of the transistor without causing a breakdown or avalanche effect. It's an important specification to ensure the proper and safe operation of the transistor. Collector Emitter Breakout Voltage is denoted by V_ce symbol.

How to calculate Breakout Voltage of Collector Emitter using this online calculator? To use this online calculator for Breakout Voltage of Collector Emitter, enter Collector Base Breakout Voltage (V_cb), Current Gain of BJT (i_g) & Root Number (n) and hit the calculate button. Here is how the Breakout Voltage of Collector Emitter calculation can be explained with given input values -> 2.103602 = 3.52/(2.8)^(1/2).

FAQ

What is Breakout Voltage of Collector Emitter?

Breakout Voltage of Collector Emitter is a critical parameter in bipolar junction transistors (BJTs). It represents the maximum voltage that can be applied between the collector and emitter terminals of the transistor without causing a breakdown or avalanche effect. It's an important specification to ensure the proper and safe operation of the transistor and is represented as V_ce = V_cb/(i_g)^(1/n) or Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number). Collector Base Breakout Voltage is the maximum voltage between the collector and base terminals of a bipolar junction transistor without causing a breakdown in the transistor, Current Gain of BJT is used to describe the amplification properties of the transistor. It indicates how much the collector current is amplified with respect to the base current & Root Number is represent a constant or a factor associated with the transistor.

How to calculate Breakout Voltage of Collector Emitter?

Breakout Voltage of Collector Emitter is a critical parameter in bipolar junction transistors (BJTs). It represents the maximum voltage that can be applied between the collector and emitter terminals of the transistor without causing a breakdown or avalanche effect. It's an important specification to ensure the proper and safe operation of the transistor is calculated using Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number). To calculate Breakout Voltage of Collector Emitter, you need Collector Base Breakout Voltage (V_cb), Current Gain of BJT (i_g) & Root Number (n). With our tool, you need to enter the respective value for Collector Base Breakout Voltage, Current Gain of BJT & Root Number and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search