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Body Effect in MOSFET Calculator

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✖Threshold Voltage with Zero Body Bias refers to the threshold voltage when there is no external bias applied to the semiconductor substrate (body terminal).ⓘ Threshold Voltage with Zero Body Bias [V_th]			+10% -10%
✖Body Effect Parameter is a parameter that characterizes the sensitivity of the threshold voltage of MOSFET.ⓘ Body Effect Parameter [γ]			+10% -10%
✖Bulk Fermi Potential is a parameter that describes the electrostatic potential in the bulk (interior) of a semiconductor material.ⓘ Bulk Fermi Potential [Φ_f]			+10% -10%
✖Voltage Applied to Body is the voltage applied to the body terminal. This voltage can have a significant impact on the behavior and performance of the MOSFET.ⓘ Voltage Applied to Body [V_bs]			+10% -10%

✖Threshold Voltage with Substrate is a crucial parameter that defines the point at which the transistor begins to conduct current from the source to the drain.ⓘ Body Effect in MOSFET [V_t]

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Body Effect in MOSFET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))
V_t = V_th+γ*(sqrt(2*Φ_f+V_bs)-sqrt(2*Φ_f))
This formula uses 1 Functions, 5 Variables

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Threshold Voltage with Substrate - (Measured in Volt) - Threshold Voltage with Substrate is a crucial parameter that defines the point at which the transistor begins to conduct current from the source to the drain.
Threshold Voltage with Zero Body Bias - (Measured in Volt) - Threshold Voltage with Zero Body Bias refers to the threshold voltage when there is no external bias applied to the semiconductor substrate (body terminal).
Body Effect Parameter - Body Effect Parameter is a parameter that characterizes the sensitivity of the threshold voltage of MOSFET.
Bulk Fermi Potential - (Measured in Volt) - Bulk Fermi Potential is a parameter that describes the electrostatic potential in the bulk (interior) of a semiconductor material.
Voltage Applied to Body - (Measured in Volt) - Voltage Applied to Body is the voltage applied to the body terminal. This voltage can have a significant impact on the behavior and performance of the MOSFET.

STEP 1: Convert Input(s) to Base Unit

Threshold Voltage with Zero Body Bias: 3.4 Volt --> 3.4 Volt No Conversion Required
Body Effect Parameter: 0.56 --> No Conversion Required
Bulk Fermi Potential: 0.25 Volt --> 0.25 Volt No Conversion Required
Voltage Applied to Body: 2.43 Volt --> 2.43 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V_t = V_th+γ*(sqrt(2*Φ_f+V_bs)-sqrt(2*Φ_f)) --> 3.4+0.56*(sqrt(2*0.25+2.43)-sqrt(2*0.25))

Evaluating ... ...

V_t = 3.96258579757846

STEP 3: Convert Result to Output's Unit

3.96258579757846 Volt --> No Conversion Required

FINAL ANSWER

3.96258579757846 ≈ 3.962586 Volt <-- Threshold Voltage with Substrate

(Calculation completed in 00.004 seconds)

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< MOS IC Fabrication Calculators

Body Effect in MOSFET

LaTeX Go Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential))

Drain Current of MOSFET at Saturation Region

LaTeX Go Drain Current = Transconductance Parameter/2*(Gate Source Voltage-Threshold Voltage with Zero Body Bias)^2*(1+Channel Length Modulation Factor*Drain Source Voltage)

Channel Resistance

LaTeX Go Channel Resistance = Transistor's Length/Transistor's Width*1/(Electron Mobility*Carrier Density)

MOSFET Unity-Gain Frequency

LaTeX Go Unity Gain Frequency in MOSFET = Transconductance in MOSFET/(Gate Source Capacitance+Gate Drain Capacitance)

Body Effect in MOSFET Formula

LaTeX Go

What is the role of the body effect parameter?

The body effect parameter quantifies the sensitivity of the threshold voltage to changes in the source-to-body voltage. It is part of the equation that describes the effective threshold voltage.

How to Calculate Body Effect in MOSFET?

Body Effect in MOSFET calculator uses Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential)) to calculate the Threshold Voltage with Substrate, The Body Effect in MOSFET is defined as the phenomena that describes how the voltage applied to the semiconductor substrate (body) affects the behavior of the transistor. The body effect occurs due to the change in the threshold voltage of the MOSFET when the voltage between the source and the substrate is varied. Threshold Voltage with Substrate is denoted by V_t symbol.

How to calculate Body Effect in MOSFET using this online calculator? To use this online calculator for Body Effect in MOSFET, enter Threshold Voltage with Zero Body Bias (V_th), Body Effect Parameter (γ), Bulk Fermi Potential (Φ_f) & Voltage Applied to Body (V_bs) and hit the calculate button. Here is how the Body Effect in MOSFET calculation can be explained with given input values -> 3.962586 = 3.4+0.56*(sqrt(2*0.25+2.43)-sqrt(2*0.25)).

FAQ

What is Body Effect in MOSFET?

The Body Effect in MOSFET is defined as the phenomena that describes how the voltage applied to the semiconductor substrate (body) affects the behavior of the transistor. The body effect occurs due to the change in the threshold voltage of the MOSFET when the voltage between the source and the substrate is varied and is represented as V_t = V_th+γ*(sqrt(2*Φ_f+V_bs)-sqrt(2*Φ_f)) or Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential)). Threshold Voltage with Zero Body Bias refers to the threshold voltage when there is no external bias applied to the semiconductor substrate (body terminal), Body Effect Parameter is a parameter that characterizes the sensitivity of the threshold voltage of MOSFET, Bulk Fermi Potential is a parameter that describes the electrostatic potential in the bulk (interior) of a semiconductor material & Voltage Applied to Body is the voltage applied to the body terminal. This voltage can have a significant impact on the behavior and performance of the MOSFET.

How to calculate Body Effect in MOSFET?

The Body Effect in MOSFET is defined as the phenomena that describes how the voltage applied to the semiconductor substrate (body) affects the behavior of the transistor. The body effect occurs due to the change in the threshold voltage of the MOSFET when the voltage between the source and the substrate is varied is calculated using Threshold Voltage with Substrate = Threshold Voltage with Zero Body Bias+Body Effect Parameter*(sqrt(2*Bulk Fermi Potential+Voltage Applied to Body)-sqrt(2*Bulk Fermi Potential)). To calculate Body Effect in MOSFET, you need Threshold Voltage with Zero Body Bias (V_th), Body Effect Parameter (γ), Bulk Fermi Potential (Φ_f) & Voltage Applied to Body (V_bs). With our tool, you need to enter the respective value for Threshold Voltage with Zero Body Bias, Body Effect Parameter, Bulk Fermi Potential & Voltage Applied to Body and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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