Bit Capacitance Calculator

✖The positive voltage is defined as the voltage calculated when the circuit is connected to the power supply.It is usually called Vdd or power supply of the circuit.ⓘ Positive Voltage [V_dd]			+10% -10%
✖Cell Capacitance is the capacitance of individual cell.ⓘ Cell Capacitance [C_cell]			+10% -10%
✖Voltage Swing on Bitline is defined as full-swing local bitline SRAM architecture, which is based on the 22-nm FinFET technology for low-voltage operation.ⓘ Voltage Swing on Bitline [ΔV]			+10% -10%

✖Bit Capacitance is one bit's Capacitance in cmos vlsi.ⓘ Bit Capacitance [C_bit]

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Bit Capacitance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance
C_bit = ((V_dd*C_cell)/(2*ΔV))-C_cell
This formula uses 4 Variables

Variables Used

Bit Capacitance - (Measured in Farad) - Bit Capacitance is one bit's Capacitance in cmos vlsi.
Positive Voltage - (Measured in Volt) - The positive voltage is defined as the voltage calculated when the circuit is connected to the power supply.It is usually called Vdd or power supply of the circuit.
Cell Capacitance - (Measured in Farad) - Cell Capacitance is the capacitance of individual cell.
Voltage Swing on Bitline - (Measured in Volt) - Voltage Swing on Bitline is defined as full-swing local bitline SRAM architecture, which is based on the 22-nm FinFET technology for low-voltage operation.

STEP 1: Convert Input(s) to Base Unit

Positive Voltage: 2.58 Volt --> 2.58 Volt No Conversion Required
Cell Capacitance: 5.98 Picofarad --> 5.98E-12 Farad (Check conversion here)
Voltage Swing on Bitline: 0.42 Volt --> 0.42 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_bit = ((V_dd*C_cell)/(2*ΔV))-C_cell --> ((2.58*5.98E-12)/(2*0.42))-5.98E-12

Evaluating ... ...

C_bit = 1.23871428571429E-11

STEP 3: Convert Result to Output's Unit

1.23871428571429E-11 Farad -->12.3871428571429 Picofarad (Check conversion here)

FINAL ANSWER

12.3871428571429 ≈ 12.38714 Picofarad <-- Bit Capacitance

(Calculation completed in 00.004 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

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< Array Datapath Subsystem Calculators

Ground Capacitance

LaTeX Go Ground Capacitance = ((Agressor Voltage*Adjacent Capacitance)/Victim Voltage)-Adjacent Capacitance

'XOR' Delay

LaTeX Go XOR Delay = Ripple Time-(Propagation Delay+(Gates on Critical Path-1)*AND-OR Gate Delay)

Carry-Ripple Adder Critical Path Delay

LaTeX Go Ripple Time = Propagation Delay+(Gates on Critical Path-1)*AND-OR Gate Delay+XOR Delay

N-Bit Carry-Skip Adder

LaTeX Go N-bit Carry Skip Adder = N-Input AND Gate*K-Input AND Gate

Bit Capacitance Formula

LaTeX Go

Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance
C_bit = ((V_dd*C_cell)/(2*ΔV))-C_cell

How does various capacitances vary in dynamic RAM or DRAM?

The DRAM capacitor Cell must be as physically small as possible to achieve good density. However, the bit line is contacted to many DRAM cells and has a relatively large capacitance C bit. Therefore, the cell capacitance is typically much smaller than the bit line capacitance. A large cell capacitance is important to provide a reasonable voltage swing. It also is necessary to retain the contents of the cell for an acceptably long time and to minimize soft errors.

How to Calculate Bit Capacitance?

Bit Capacitance calculator uses Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance to calculate the Bit Capacitance, The Bit Capacitance formula is represented as CB. It is calculated as the capacitance of the bit line per unit length. Memory cells are etched onto a silicon wafer in an array of columns (bit lines) and rows (word lines). Bit Capacitance is denoted by C_bit symbol.

How to calculate Bit Capacitance using this online calculator? To use this online calculator for Bit Capacitance, enter Positive Voltage (V_dd), Cell Capacitance (C_cell) & Voltage Swing on Bitline (ΔV) and hit the calculate button. Here is how the Bit Capacitance calculation can be explained with given input values -> 1.2E+13 = ((2.58*5.98E-12)/(2*0.42))-5.98E-12.

FAQ

What is Bit Capacitance?

The Bit Capacitance formula is represented as CB. It is calculated as the capacitance of the bit line per unit length. Memory cells are etched onto a silicon wafer in an array of columns (bit lines) and rows (word lines) and is represented as C_bit = ((V_dd*C_cell)/(2*ΔV))-C_cell or Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance. The positive voltage is defined as the voltage calculated when the circuit is connected to the power supply.It is usually called Vdd or power supply of the circuit, Cell Capacitance is the capacitance of individual cell & Voltage Swing on Bitline is defined as full-swing local bitline SRAM architecture, which is based on the 22-nm FinFET technology for low-voltage operation.

How to calculate Bit Capacitance?

The Bit Capacitance formula is represented as CB. It is calculated as the capacitance of the bit line per unit length. Memory cells are etched onto a silicon wafer in an array of columns (bit lines) and rows (word lines) is calculated using Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance. To calculate Bit Capacitance, you need Positive Voltage (V_dd), Cell Capacitance (C_cell) & Voltage Swing on Bitline (ΔV). With our tool, you need to enter the respective value for Positive Voltage, Cell Capacitance & Voltage Swing on Bitline and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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