Base-Emitter Junction Capacitance Solution

STEP 0: Pre-Calculation Summary
Formula Used
Base–Emitter Junction Capacitance = 2*Emitter-Base Capacitance
C = 2*Ceb
This formula uses 2 Variables
Variables Used
Base–Emitter Junction Capacitance - (Measured in Farad) - Base–Emitter Junction Capacitance is the capacitance of the junction that is forward-biased and is represented by a diode.
Emitter-Base Capacitance - (Measured in Farad) - Emitter-base capacitance is the capacitance between the emitter and the base.
STEP 1: Convert Input(s) to Base Unit
Emitter-Base Capacitance: 1.5 Microfarad --> 1.5E-06 Farad (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
C = 2*Ceb --> 2*1.5E-06
Evaluating ... ...
C = 3E-06
STEP 3: Convert Result to Output's Unit
3E-06 Farad -->3 Microfarad (Check conversion ​here)
FINAL ANSWER
3 Microfarad <-- Base–Emitter Junction Capacitance
(Calculation completed in 00.020 seconds)

Credits

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Created by Payal Priya
Birsa Institute of Technology (BIT), Sindri
Payal Priya has created this Calculator and 600+ more calculators!
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Verified by Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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Internal Capacitive Effects and High Frequency Model Calculators

Small-Signal Diffusion Capacitance of BJT
​ LaTeX ​ Go Emitter-Base Capacitance = Device Constant*(Collector Current/Threshold Voltage)
Small-Signal Diffusion Capacitance
​ LaTeX ​ Go Emitter-Base Capacitance = Device Constant*Transconductance
Stored Electron Charge in Base of BJT
​ LaTeX ​ Go Stored Electron Charge = Device Constant*Collector Current
Base-Emitter Junction Capacitance
​ LaTeX ​ Go Base–Emitter Junction Capacitance = 2*Emitter-Base Capacitance

Base-Emitter Junction Capacitance Formula

​LaTeX ​Go
Base–Emitter Junction Capacitance = 2*Emitter-Base Capacitance
C = 2*Ceb

What is BJT and its types?

A bipolar transistor (bipolar junction transistor: BJT) consists of three semiconductor regions forming two junctions. There are two types of structure: NPN and PNP. Products with NPN up to 800 V and PNP up to -600 V are available. In addition, there are also bias resistor built-in transistors (BRTs).

How to Calculate Base-Emitter Junction Capacitance?

Base-Emitter Junction Capacitance calculator uses Base–Emitter Junction Capacitance = 2*Emitter-Base Capacitance to calculate the Base–Emitter Junction Capacitance, The Base-emitter junction capacitance formula is defined as the depletion layer capacitance in the emitter-base junction which is a forward-biased junction. Base–Emitter Junction Capacitance is denoted by C symbol.

How to calculate Base-Emitter Junction Capacitance using this online calculator? To use this online calculator for Base-Emitter Junction Capacitance, enter Emitter-Base Capacitance (Ceb) and hit the calculate button. Here is how the Base-Emitter Junction Capacitance calculation can be explained with given input values -> 3E+6 = 2*1.5E-06.

FAQ

What is Base-Emitter Junction Capacitance?
The Base-emitter junction capacitance formula is defined as the depletion layer capacitance in the emitter-base junction which is a forward-biased junction and is represented as C = 2*Ceb or Base–Emitter Junction Capacitance = 2*Emitter-Base Capacitance. Emitter-base capacitance is the capacitance between the emitter and the base.
How to calculate Base-Emitter Junction Capacitance?
The Base-emitter junction capacitance formula is defined as the depletion layer capacitance in the emitter-base junction which is a forward-biased junction is calculated using Base–Emitter Junction Capacitance = 2*Emitter-Base Capacitance. To calculate Base-Emitter Junction Capacitance, you need Emitter-Base Capacitance (Ceb). With our tool, you need to enter the respective value for Emitter-Base Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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