Base Current of PNP Transistor using Saturation Current Calculator

✖Saturation Current is the diode leakage current density in the absence of light. It is an important parameter which differentiates one diode from another.ⓘ Saturation Current [I_sat]			+10% -10%
✖Common emitter current gain is influenced by 2 factors: width of base region W, and relative dopings of base region and emitter region. Its range varies from 50-200.ⓘ Common Emitter Current Gain [β]			+10% -10%
✖Base-Emitter Voltage is the forward voltage between the base and emitter of the transistor.ⓘ Base-Emitter Voltage [V_BE]			+10% -10%
✖Thermal Voltage is the voltage produced within the p-n junction.ⓘ Thermal Voltage [V_t]			+10% -10%

✖Base Current is a crucial current of bipolar junction transistor. Without the base current, the transistor cannot turn on.ⓘ Base Current of PNP Transistor using Saturation Current [I_B]

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Base Current of PNP Transistor using Saturation Current Solution

STEP 0: Pre-Calculation Summary

Formula Used

Base Current = (Saturation Current/Common Emitter Current Gain)*e^(Base-Emitter Voltage/Thermal Voltage)
I_B = (I_sat/β)*e^(V_BE/V_t)
This formula uses 1 Constants, 5 Variables

Constants Used

e - Napier's constant Value Taken As 2.71828182845904523536028747135266249

Variables Used

Base Current - (Measured in Ampere) - Base Current is a crucial current of bipolar junction transistor. Without the base current, the transistor cannot turn on.
Saturation Current - (Measured in Ampere) - Saturation Current is the diode leakage current density in the absence of light. It is an important parameter which differentiates one diode from another.
Common Emitter Current Gain - Common emitter current gain is influenced by 2 factors: width of base region W, and relative dopings of base region and emitter region. Its range varies from 50-200.
Base-Emitter Voltage - (Measured in Volt) - Base-Emitter Voltage is the forward voltage between the base and emitter of the transistor.
Thermal Voltage - (Measured in Volt) - Thermal Voltage is the voltage produced within the p-n junction.

STEP 1: Convert Input(s) to Base Unit

Saturation Current: 1.675 Milliampere --> 0.001675 Ampere (Check conversion here)
Common Emitter Current Gain: 65 --> No Conversion Required
Base-Emitter Voltage: 5.15 Volt --> 5.15 Volt No Conversion Required
Thermal Voltage: 4.7 Volt --> 4.7 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_B = (I_sat/β)*e^(V_BE/V_t) --> (0.001675/65)*e^(5.15/4.7)

Evaluating ... ...

I_B = 7.70863217186262E-05

STEP 3: Convert Result to Output's Unit

7.70863217186262E-05 Ampere -->0.0770863217186262 Milliampere (Check conversion here)

FINAL ANSWER

0.0770863217186262 ≈ 0.077086 Milliampere <-- Base Current

(Calculation completed in 00.010 seconds)

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Birsa Institute of Technology (BIT), Sindri

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< Base Current Calculators

Base Current using Saturation Current in DC

LaTeX Go Base Current = (Saturation Current/Common Emitter Current Gain)*e^(Base-Collector Voltage/Thermal Voltage)+Saturation Vapour Pressure*e^(Base-Collector Voltage/Thermal Voltage)

Drain Current given Device Parameter

LaTeX Go Drain Current = 1/2*Transconductance*Aspect Ratio*(Effective Voltage-Threshold Voltage)^2*(1+Device Parameter*Voltage between Drain and Source)

Base Current 2 of BJT

LaTeX Go Base Current = (Saturation Current/Common Emitter Current Gain)*(e^(Base-Emitter Voltage/Thermal Voltage))

Base Current 1 of BJT

LaTeX Go Base Current = Collector Current/Common Emitter Current Gain

< BJT Circuit Calculators

Total Power Dissipated in BJT

LaTeX Go Power = Collector-Emitter Voltage*Collector Current+Base-Emitter Voltage*Base Current

Common Mode Rejection Ratio

LaTeX Go Common Mode Rejection Ratio = 20*log10(Differential Mode Gain/Common Mode Gain)

Common-Base Current Gain

LaTeX Go Common-Base Current Gain = Common Emitter Current Gain/(Common Emitter Current Gain+1)

Intrinsic Gain of BJT

LaTeX Go Intrinsic Gain = Early Voltage/Thermal Voltage

Base Current of PNP Transistor using Saturation Current Formula

LaTeX Go

Base Current = (Saturation Current/Common Emitter Current Gain)*e^(Base-Emitter Voltage/Thermal Voltage)
I_B = (I_sat/β)*e^(V_BE/V_t)

What are the components of base current?

Base current is due to the holes injected from the base region into the emitter region. This current component is proportional to e^V_BE /V_T.

How to Calculate Base Current of PNP Transistor using Saturation Current?

Base Current of PNP Transistor using Saturation Current calculator uses Base Current = (Saturation Current/Common Emitter Current Gain)*e^(Base-Emitter Voltage/Thermal Voltage) to calculate the Base Current, The Base Current of PNP Transistor using Saturation Current is proportional to the number of electrons injected into the base. In a PNP transistor, the base current is carried by holes, which are minority carriers in the P-type material. When a positive voltage is applied to the base with respect to the emitter, holes from the base region are injected into the emitter region, and a current flows through the transistor. Base Current is denoted by I_B symbol.

How to calculate Base Current of PNP Transistor using Saturation Current using this online calculator? To use this online calculator for Base Current of PNP Transistor using Saturation Current, enter Saturation Current (I_sat), Common Emitter Current Gain (β), Base-Emitter Voltage (V_BE) & Thermal Voltage (V_t) and hit the calculate button. Here is how the Base Current of PNP Transistor using Saturation Current calculation can be explained with given input values -> 77.08632 = (0.001675/65)*e^(5.15/4.7).

FAQ

What is Base Current of PNP Transistor using Saturation Current?

The Base Current of PNP Transistor using Saturation Current is proportional to the number of electrons injected into the base. In a PNP transistor, the base current is carried by holes, which are minority carriers in the P-type material. When a positive voltage is applied to the base with respect to the emitter, holes from the base region are injected into the emitter region, and a current flows through the transistor and is represented as I_B = (I_sat/β)*e^(V_BE/V_t) or Base Current = (Saturation Current/Common Emitter Current Gain)*e^(Base-Emitter Voltage/Thermal Voltage). Saturation Current is the diode leakage current density in the absence of light. It is an important parameter which differentiates one diode from another, Common emitter current gain is influenced by 2 factors: width of base region W, and relative dopings of base region and emitter region. Its range varies from 50-200, Base-Emitter Voltage is the forward voltage between the base and emitter of the transistor & Thermal Voltage is the voltage produced within the p-n junction.

How to calculate Base Current of PNP Transistor using Saturation Current?

The Base Current of PNP Transistor using Saturation Current is proportional to the number of electrons injected into the base. In a PNP transistor, the base current is carried by holes, which are minority carriers in the P-type material. When a positive voltage is applied to the base with respect to the emitter, holes from the base region are injected into the emitter region, and a current flows through the transistor is calculated using Base Current = (Saturation Current/Common Emitter Current Gain)*e^(Base-Emitter Voltage/Thermal Voltage). To calculate Base Current of PNP Transistor using Saturation Current, you need Saturation Current (I_sat), Common Emitter Current Gain (β), Base-Emitter Voltage (V_BE) & Thermal Voltage (V_t). With our tool, you need to enter the respective value for Saturation Current, Common Emitter Current Gain, Base-Emitter Voltage & Thermal Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Base Current?

In this formula, Base Current uses Saturation Current, Common Emitter Current Gain, Base-Emitter Voltage & Thermal Voltage. We can use 3 other way(s) to calculate the same, which is/are as follows -

Base Current = Collector Current/Common Emitter Current Gain
Base Current = (Saturation Current/Common Emitter Current Gain)*(e^(Base-Emitter Voltage/Thermal Voltage))
Base Current = (Saturation Current/Common Emitter Current Gain)*e^(Base-Collector Voltage/Thermal Voltage)+Saturation Vapour Pressure*e^(Base-Collector Voltage/Thermal Voltage)

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