LCM of two numbers

Acceptor Concentration Calculator

Engineering Chemistry Financial Health More >>

↳

Electronics Chemical Engineering Civil Electrical More >>

⤿

Solid State Devices Amplifiers Analog Communications Analog Electronics More >>

⤿

SSD Junction Electrons and Holes Energy Band and Charge Carrier Semiconductor Carriers

✖Total Acceptor Charge refers to the overall net charge associated with the acceptor atoms in a semiconductor material or device.ⓘ Total Acceptor Charge [\|Q\|]			+10% -10%
✖Charge Penetration N-type refers to the phenomenon where additional electrons from dopant atoms, typically phosphorus or arsenic, penetrate the crystal lattice of the semiconductor material.ⓘ Charge Penetration N-type [x_no]			+10% -10%
✖The Junction Area is the boundary or interface area between two types of semiconductor materials in a pn diode.ⓘ Junction Area [A_j]			+10% -10%

✖Acceptor concentration is the concentration an acceptor or dopant atom that when substituted into a semiconductor lattice forms a p-type region.ⓘ Acceptor Concentration [N_a]

⎘ Copy

👎

Formula

LaTeX

Reset

👍

Download SSD Junction Formulas PDF PDF Image

Acceptor Concentration Solution

STEP 0: Pre-Calculation Summary

Formula Used

Acceptor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Junction Area)
N_a = |Q|/([Charge-e]*x_no*A_j)
This formula uses 1 Constants, 4 Variables

Constants Used

[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Variables Used

Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor concentration is the concentration an acceptor or dopant atom that when substituted into a semiconductor lattice forms a p-type region.
Total Acceptor Charge - (Measured in Coulomb) - Total Acceptor Charge refers to the overall net charge associated with the acceptor atoms in a semiconductor material or device.
Charge Penetration N-type - (Measured in Meter) - Charge Penetration N-type refers to the phenomenon where additional electrons from dopant atoms, typically phosphorus or arsenic, penetrate the crystal lattice of the semiconductor material.
Junction Area - (Measured in Square Meter) - The Junction Area is the boundary or interface area between two types of semiconductor materials in a pn diode.

STEP 1: Convert Input(s) to Base Unit

Total Acceptor Charge: 13 Coulomb --> 13 Coulomb No Conversion Required
Charge Penetration N-type: 0.019 Micrometer --> 1.9E-08 Meter (Check conversion here)
Junction Area: 5401.3 Square Micrometer --> 5.4013E-09 Square Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

N_a = |Q|/([Charge-e]*x_no*A_j) --> 13/([Charge-e]*1.9E-08*5.4013E-09)

Evaluating ... ...

N_a = 7.90644149770933E+35

STEP 3: Convert Result to Output's Unit

7.90644149770933E+35 1 per Cubic Meter --> No Conversion Required

FINAL ANSWER

7.90644149770933E+35 ≈ 7.9E+35 1 per Cubic Meter <-- Acceptor Concentration

(Calculation completed in 00.004 seconds)

You are here -

Home » Engineering » Electronics » Solid State Devices » SSD Junction » Acceptor Concentration

Credits

Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Calculator and 1900+ more calculators!

< SSD Junction Calculators

Junction Capacitance

LaTeX Go Junction Capacitance = (Junction Area/2)*sqrt((2*[Charge-e]*Constant Length Offset*Doping Concentration of Base)/(Source Voltage-Source Voltage 1))

Series Resistance in P-type

LaTeX Go Series Resistance in P Junction = ((Source Voltage-Junction Voltage)/Electric Current)-Series Resistance in N Junction

Junction Voltage

LaTeX Go Junction Voltage = Source Voltage-(Series Resistance in P Junction+Series Resistance in N Junction)*Electric Current

N-Type Width

LaTeX Go Charge Penetration N-type = Total Acceptor Charge/(Junction Area*Acceptor Concentration*[Charge-e])

Acceptor Concentration Formula

LaTeX Go

Acceptor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Junction Area)
N_a = |Q|/([Charge-e]*x_no*A_j)

What are the electron and hole concentrations?

Electron concentration increases as F E moves closer to the conduction band. for F E larger than v E by several kT . From these equations, the concentration of holes in the valence band is . Thus hole concentration increases as F E moves closer to the valence band.

How to Calculate Acceptor Concentration?

Acceptor Concentration calculator uses Acceptor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Junction Area) to calculate the Acceptor Concentration, The Acceptor Concentration formula refers to the concentration or abundance of acceptor impurities in a semiconductor material. Acceptors are dopant atoms that have fewer valence electrons than the host semiconductor atoms, resulting in an excess positive charge. Acceptor Concentration is denoted by N_a symbol.

How to calculate Acceptor Concentration using this online calculator? To use this online calculator for Acceptor Concentration, enter Total Acceptor Charge (|Q|), Charge Penetration N-type (x_no) & Junction Area (A_j) and hit the calculate button. Here is how the Acceptor Concentration calculation can be explained with given input values -> 7.9E+35 = 13/([Charge-e]*1.9E-08*5.4013E-09).

FAQ

What is Acceptor Concentration?

The Acceptor Concentration formula refers to the concentration or abundance of acceptor impurities in a semiconductor material. Acceptors are dopant atoms that have fewer valence electrons than the host semiconductor atoms, resulting in an excess positive charge and is represented as N_a = |Q|/([Charge-e]*x_no*A_j) or Acceptor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Junction Area). Total Acceptor Charge refers to the overall net charge associated with the acceptor atoms in a semiconductor material or device, Charge Penetration N-type refers to the phenomenon where additional electrons from dopant atoms, typically phosphorus or arsenic, penetrate the crystal lattice of the semiconductor material & The Junction Area is the boundary or interface area between two types of semiconductor materials in a pn diode.

How to calculate Acceptor Concentration?

The Acceptor Concentration formula refers to the concentration or abundance of acceptor impurities in a semiconductor material. Acceptors are dopant atoms that have fewer valence electrons than the host semiconductor atoms, resulting in an excess positive charge is calculated using Acceptor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Junction Area). To calculate Acceptor Concentration, you need Total Acceptor Charge (|Q|), Charge Penetration N-type (x_no) & Junction Area (A_j). With our tool, you need to enter the respective value for Total Acceptor Charge, Charge Penetration N-type & Junction Area and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search